Observation of light emission from real-space transfer devices

Higman, T.K.; Hagedorn, M.S.
March 1992
Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1342
Academic Journal
Examines light emission caused by real-space transfer of majority electrons into an n-type collecting layer. Creation of hole by impact ionization of transferred electrons; Observation of high mobility in inverted selectively doped gallium arsenide/aluminum gallium arsenide heterojunctions; Creation of light by the leakage current.


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