Nature of band bending at semiconductor surfaces by contactless electroreflectance

Yin, X.; Xinxin Guo
March 1992
Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1336
Academic Journal
Investigates the nature of band bending at semiconductor surfaces by electroreflectance. Application of a capacitorlike mode in a contactless manner; Placement of samples in an ultrahigh vacuum chamber; Suitability of method for low or intermediate field regimes.


Related Articles

  • Oscillations in the optical response of (001)GaAs and AlGaAs surfaces during crystal growth by molecular beam epitaxy. Harbison, J. P.; Aspnes, D. E.; Studna, A. A.; Florez, L. T.; Kelly, M. K. // Applied Physics Letters;6/13/1988, Vol. 52 Issue 24, p2046 

    Upon initiation of growth by molecular beam epitaxy, reflectance-difference (RD) signals for (001)GaAs and AlAs surfaces exhibit a cyclic component that is periodic with (001) atomic bilayer coverage and that follows either surface structure or surface chemistry (coverage), depending on...

  • Characterization of process-induced strains in GaAs/Ga[sub 0.7]Al[sub 0.3]As quantum dots using.... Qiang, H.; Pollak, Fred H. // Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2830 

    Examines the characteristics of GaAs/Ga[sub 0.7]Al[sub 0.3]As quantum dots fabricated by reactive-ion etching. Analysis of the magnitude and nature of the process-induced strain in the dots; Transition between the conduction and valence bands; Details of photoreflectance features of the quantum...

  • Nano-cones Formed on a Surface of Semiconductors by Laser Radiation: Technology, Model and Properties. Medvid', A.; Onufrijevs, P. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p259 

    The new laser method for nanostructures formation on a surface of semiconductors Si, Ge, GaAs and SiGe, CdZnTe solid solutions is proposed. For the first time was shown the possibility of graded band gap structure formation in elementary semiconductors. Thermogradient effect has a main role in...

  • High voltage GaInP/GaAs dual-material Schottky rectifiers. Schoen, K.J.; Harmon, E.S. // Applied Physics Letters;7/28/1997, Vol. 71 Issue 4, p518 

    Measures the breakdown voltage and reverse leakage current of gallium indium phosphide/gallium arsenide dual-material Schottky rectifiers. Effect of interfacial conduction band offset on current transport; Relation between surface density and surface leakage current; Importance of delta doping...

  • Subband characteristics of Si δ-doped pseudomorphic In[sub 0.2]Ga[sub 0.8]As/GaAs heterostructures. Huang, Zhiming; Jiang, Chunping; Zhang, Zhanhong; Lin, Tie; Chu, Junhao; Yu, Roger // Journal of Applied Physics;9/15/2001, Vol. 90 Issue 6 

    Subband properties of Si δ-doped pseudomorphic In[sub 0.2]Ga[sub 0.8]As/GaAs heterostructures have been investigated by solving the Schro¨dinger–Kohn–Sham equation and the Poission equation self-consistently, and by the density–density dynamical response function....

  • Biaxial strain-modified valence and conduction band offsets of zinc-blende GaN, GaP, GaAs, InN, InP, and InAs, and optical bowing of strained epitaxial InGaN alloys. Kent, P. R. C.; Hart, Gus L. W.; Zunger, Alex // Applied Physics Letters;12/2/2002, Vol. 81 Issue 23, p4377 

    Using density-functional calculations, we obtain the (001) biaxial strain dependence of the valence and conduction band energies of GaN, GaP, GaAs, InN, InP, and InAs. The results are fit to a convenient-to-use polynomial and the fits provided in tabular form. Using the calculated biaxial...

  • Conduction-band tailing in parabolic band semiconductors. Chakraborty, P.K.; Biswas, J.C. // Journal of Applied Physics;10/1/1997, Vol. 82 Issue 7, p3328 

    Proposes theoretical models for the band tailing in heavily doped semiconductors. Dispersion relation for band tails in the parabolic band based on Kane's theory; Development of a differential model for the density of states under band tailing conditions.

  • Elimination of heterojunction band discontinuities by modulation doping. Schubert, E.F.; Tu, L.W. // Applied Physics Letters;1/27/1992, Vol. 60 Issue 4, p466 

    Examines the effect of modulation doping on conduction and valence band discontinuities. Occurrence of band discontinuities at the junction of two heterogeneous semiconductors; Application of modulation doping concept to the distributed Bragg reflectors; Comparison with step-graded distributed...

  • Comment on 'Empirical fit to band discontinuities and barrier heights in III-V alloy systems.'. McCaldin, J.O.; McGill, T.C. // Applied Physics Letters;11/2/1992, Vol. 61 Issue 18, p2243 

    Comments on an article regarding the empirical fit to band discontinuities and barrier heights in III-V semiconductors. Views on the numerical values used in the study; Topics undiscussed in the article; Proposal of including a historical perspective.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics