Raman study of disorder and strain in epitaxial ZnS[sub x]Se[sub 1-x] films on a GaAs substrate

Kanemitsu, Yoshihiko; Yamamoto, Aishi
March 1992
Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1330
Academic Journal
Presents the characterization of the disorder and strain in ZnS[sub x]Se[sub 1-x]/gallium arsenide lattice-mismatched semiconductor heterostructures. Use of Raman spectroscopy; Estimation of the alloy disorder and phonon coherence length; Deduction of the strain from the linewidth of the gallium arsenide LO phonon.


Related Articles

  • Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment. De Wolf, Ingrid; Maes, H. E.; Jones, Stephen K. // Journal of Applied Physics;5/1/1996, Vol. 79 Issue 9, p7148 

    Presents information on a study that discussed the different steps that have to be taken in order to derive information about local mechanical stress in silicon using micro-Raman spectroscopy. Methodology of the study; Results and discussion on the study; Conclusions.

  • Stresses and strains in lattice-mismatched stripes, quantum wires, quantum dots, and substrates in Si technology. Jain, S. C.; Maes, H. E.; Pinardi, K.; De Wolf, I. // Journal of Applied Physics;6/1/1996, Vol. 79 Issue 11, p8145 

    Discusses advances in the theory and measurements of stresses and strains in silicon-based heterostructures containing submicron- and micron-size features. Stresses in lattice-mismatched epilayers; Generation and relaxation of stresses by film edges; Analytical models of edge-induced stresses.

  • Strain relaxation kinetics in Si1-xGex/Si heterostructures. Houghton, D. C. // Journal of Applied Physics;8/15/1991, Vol. 70 Issue 4, p2136 

    Offers information on a study which examined misfit strain relaxation in Si[sub1-x]Ge[subx]/Si heterostructures by the injection and propagation of misfit dislocations. Introduction to misfit dislocation propagation; Description of the experimental setup; Results and discussion.

  • Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC. Davidov, V. Yu.; Averkiev, N.S.; Goncharuk, I. N.; Nelson, D. K.; Nikitina, I. P.; Polkovnikov, A. S.; Smirnov, A. N.; Jacobson, M. A.; Semchinova, O. K. // Journal of Applied Physics;11/15/1997, Vol. 82 Issue 10, p5097 

    Discusses the effect of biaxial strain on optical phonons in high-quality GaN epitaxial layers grown on 6H-SiC substrates by metal organic chemical vapor deposition. Comparative analysis of the strain measured by x-ray diffraction and Raman spectroscopy; Study of the effect of strain on the...

  • Mapping the three-dimensional strain field around a microindentation on silicon using polishing and Raman spectroscopy. Puech, Pascal; Pinel, Stephane; Jasinevicius, Renato G.; Pizani, Paolo Sergio // Journal of Applied Physics;10/15/2000, Vol. 88 Issue 8, p4582 

    Focuses on the mapping of the strain field around a Vickers microindentation of crystalline silicon using Raman spectroscopy. Determination of the nature of the three-dimensional strain field of the microindentation by comparing the parallel and crossed scattering geometries; Application of the...

  • Polarized off-axis Raman spectroscopy: A technique for measuring stress tensors in semiconductors. Loechelt, G.H.; Cave, N.G. // Journal of Applied Physics;12/1/1999, Vol. 86 Issue 11, p6164 

    Focuses on a study which illustrated the development of polarized off-axis Raman spectroscopy for measuring the complete tensor nature of stress fields in semiconductors. Fundamental theory of the Raman spectroscopy; Calculation and formulation of shifted phonon frequencies of the Raman...

  • Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon. Bonera, Emiliano; Fanciulli, Marco; Batchelder, David N. // Applied Physics Letters;10/28/2002, Vol. 81 Issue 18, p3377 

    This letter presents a method to measure stress by a Raman spectroscopic technique that combines high spatial resolution with tensorial analysis. The experiment is based on separating the contributions to the Raman spectrum from the marginal and paraxial rays of the collection cone of the...

  • Measuring the tensor nature of stress in silicon using polarized off-axis Raman spectroscopy. Loechelt, G.H.; Cave, N.G. // Applied Physics Letters;6/26/1995, Vol. 66 Issue 26, p3639 

    Investigates the application of polarized off-axis Raman spectroscopy technique for measuring the tensor nature of stress fields in silicon. Analysis of the Raman-active optical phonon mode; Measurement of phonon frequencies and intensities; Comparison between polarized Raman spectroscopy and...

  • A method of investigating well width fluctuations in diluted magnetic semiconductor superlattices using spin-flip Raman spectroscopy. Roberts, R. G.; Hagston, W. E.; Harrison, P. // Journal of Applied Physics;6/1/1996, Vol. 79 Issue 11, p8401 

    Provides information on a study that examined the possibility of using spin-flip Raman spectroscopy as a tool for determining accurately the disorder in magnetic superlattice microstructures. Description on the theoretical model for disordered superlattices; Results and discussion on the study;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics