Structure of the stepped Si/SiO[sub 2] interface after thermal oxidation: Investigations with

Pietsch, G.J.; Kohler, U.
March 1992
Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1321
Academic Journal
Investigates the effect of thermal oxidation on the structure of the stepped silicon/silica interface. Use of scanning tunneling microscopy; Visibility of regular terrace arrays with atomic step height; Variation of the local step structure; Formation of irregular islands with increasing oxide thickness and oxidation rate.


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