TITLE

High speed operation of very low threshold strained InGaAs/GaAs double quantum well lasers

AUTHOR(S)
Zhao, B.; Chen, T.R.
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1295
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the fabrication of threshold current strained In[sub 0.2]Ga[sub 0.8]As/gallium arsenide double quantum well lasers. Techniques used in the growth of the lasers; Comparison of the modulation bandwidths of different lasers; Determination of high-modulation bandwidth at low operating current.
ACCESSION #
4240666

 

Related Articles

  • Simulation studies of bifurcation and chaos in semiconductor lasers. Tang, Ming; Wang, Shyh // Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p900 

    We apply the phase portrait analysis for photon density and carrier density to analyze simulation results obtained from the rate equations for semiconductor lasers. On the two-dimensional bifurcation diagram of modulation depth and modulation frequency, there are six regions: periodic pulse,...

  • Resonant modulation of single contact monolithic semiconductor lasers at millimeter wave.... Cutrer, David M.; Georges, John B. // Applied Physics Letters;4/24/1995, Vol. 66 Issue 17, p2153 

    Demonstrates the resonant modulation of a single contact monolithic semiconductor lasers at millimeter wave frequencies. Utilization of high attenuation of the millimeter-wave modulation signal; Acquisition of efficient mode coupling; Limitations and properties of the technique used; Usage of...

  • Frequency locking, quasiperiodicity, and chaos in modulated self-pulsing semiconductor lasers. Winful, H. G.; Chen, Y. C.; Liu, J. M. // Applied Physics Letters;3/10/1986, Vol. 48 Issue 10, p616 

    A transition to chaos via quasiperiodicity is observed in the output of a directly modulated self-pulsing semiconductor laser. By sweeping the frequency and amplitude of the current modulation, several frequency-locked states (Arnol’d tongues) are mapped out directly. Good agreement with...

  • Direct frequency modulation of vapor phase transported, distributed feedback semiconductor lasers. Vodhanel, R. S.; Cheung, N. K.; Koch, T. L. // Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p966 

    The frequency modulation (FM) due to injection current modulation of vapor phase transported distributed feedback (VPT DFB) semiconductor lasers is measured as a function of modulation frequency from 10 kHz to 1 GHz. A large frequency modulation response of 350 MHz/mA is obtained for the...

  • Periodic entrainment of power dropouts in mutually coupled semiconductor lasers. Buldú, J. M.; Vicente, Raúl; Pérez, Toni; Mirasso, Claudio R.; Torrent, M. C.; Garcıa-Ojalvo, J. // Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5105 

    We examine the effect of current modulation in the irregular dropout dynamics exhibited by two mutually coupled semiconductor lasers. Our experimental results show that a weak periodic modulation in the injection current of one of the lasers entrains the power dropouts in a very efficient way....

  • Time- and frequency-resolved measurements of frequency modulation and switching of a tunable.... Kuznetsov, M.; Stone, J.; Stulz, L.W. // Applied Physics Letters;11/11/1991, Vol. 59 Issue 20, p2492 

    Presents time- and frequency-resolved measurements of frequency modulation and switching of a tunable semiconductor laser. Complexity of the time-frequency signal; Application of the theory of time-dependent spectral measurements; Implications of the study for channel switching speed and...

  • High-speed modulation and nonlinear damping effect in InGaAs/GaAs lasers. Dutta, N. K.; Lopata, J.; Sivco, D. L.; Cho, A. Y. // Journal of Applied Physics;8/15/1991, Vol. 70 Issue 4, p2476 

    Offers information on a study which investigated the high-speed modulation characteristics of strained InGaAs/GaAs-multiquantum-well lasers. Properties of semiconductor lasers; Computational approach; Numerical results.

  • Ultrafast modulation of semiconductor lasers through a terahertz field. Ning, C.Z.; Hughes, S. // Applied Physics Letters;7/26/1999, Vol. 75 Issue 4, p442 

    Reports on the development of a mechanism to modulate and switch semiconductor lasers. Application of a sinusoidal terahertz field to a semiconductor laser; Linear modulation of the output power.

  • Pattern effects in time jitter of semiconductor lasers. Sapia, Adalberto; Spano, Paolo // Applied Physics Letters;10/12/1992, Vol. 61 Issue 15, p1748 

    Examines the effects of fast repetitive pulse modulation on time jitter of semiconductor lasers. Increase in the value of time jitter to non-legible values; Simulations of the switching process based on single mode stochastic rate equations; Relevance of time jitter to communication systems.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics