TITLE

Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during

AUTHOR(S)
Tanaka, Satoru; Kern, R. Scott
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2851
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the growth of 6H-silicon carbide thin films on 6H-silicon carbide substrates at 1050 degree celsius by gas-source molecular beam epitaxy. Effects of gas flow ratios on the growth mode; Manifestation of the subsequent deposition; Enhancement of the diffusion lengths on the adatoms.
ACCESSION #
4233214

 

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