TITLE

Deep levels in GaAs grown by atomic layer molecular beam epitaxy

AUTHOR(S)
Gombia, E.; Mosca, R.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2848
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study on the growth of atomic layer molecular beam epitaxy (ALMBE) of gallium arsenide (GaAs) deep levels. Features of the deep-level transient spectroscopy; Growth of GaAs by ALMBE of three peaks; Independence of the features to silicon during semiconductors' subcycles; Comparison between ALMBE GaAS grown and MBE GaAs grown.
ACCESSION #
4233213

 

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