TITLE

Dislocation nucleation barrier in SiGe/Si structures graded to pure Ge

AUTHOR(S)
Mooney, P.M.; LeGoues, F.K.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2845
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the strain relaxation in the layers of a silicon germanide/silicon structure graded to pure germanide using high-resolution triple-axis x-ray diffraction measurements. Explanation for the tilt of each layer; Reduction of the growth surface miscut; Variation in the material properties with alloy composition.
ACCESSION #
4233212

 

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