TITLE

Fabrication of a silicon quantum wire surrounded by silicon dioxide and its transport properties

AUTHOR(S)
Nakajima, Y.; Takahashi, Y.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2833
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the fabrication of a physically confined silicon quantum wire on a separation by implanted oxygen wafer. Presentation of the conductance measurements performed at high temperatures; Specification of the silicon wire; Fabrication of high performance two-dimensional metal-oxide-semiconductor field-effect transistor.
ACCESSION #
4233208

 

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