TITLE

Tunneling current due to incident electrons derived from the valence bands in AlSb-InAs-AlSb

AUTHOR(S)
Jih-Chen Chiang
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2821
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the theoretical study of current-voltage characteristics of aluminum antimony-indium arsenic-aluminum antimony double-barrier diode with a thin indium arsenide well. Account on the sp bond-orbital model; Demonstration of the tunneling current; Details on the dominant contribution of the electrons.
ACCESSION #
4233204

 

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