TITLE

Interaction of 300-5000 eV ions with GaAs(110)

AUTHOR(S)
Wang, X.-S.; Pechman, R.J.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2818
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the result of systematic scanning tunneling microscopy investigations of medium energy ion bombardment of gallium arsenide at normal incidence. Presentation of the single-collision damage structure variations; Dependence of sputtering yield on ion mass and energy; Discussion on the mechanism of ion-surface impact.
ACCESSION #
4233203

 

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