TITLE

Novel method for deposition of in situ arsenic-doped polycrystalline silicon using conventional

AUTHOR(S)
Thakur, R.P.S.; Turner, C.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2809
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the low pressure chemical vapor deposition of in situ arsenic-doped silicon films using a standard vertical thermal reactor. Characteristics of an arsenic-doped polycrystalline deposited silicon film; Manifestation on the homogeneous single layer films; Discussion on the high doping concentration and improved deposition rates.
ACCESSION #
4233200

 

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