Fast neutron irradiation for Czochralski grown silicon

Yuesheng Xu; Yangxian Li
November 1994
Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2807
Academic Journal
Examines the invention of excellent intrinsic gettering through interaction between impurities and defects introduced by fast neutron irradiation into silicon. Irradiation of Czochralski grown silicon; Change of quality and density of point defects; Manifestation on the controlled precipitation of oxygen during heat treatment cycles.


Related Articles

  • Model of defect reactions and the influence of clustering in pulse-neutron-irradiated Si. Myers, S. M.; Cooper, P. J.; Wampler, W. R. // Journal of Applied Physics;Aug2008, Vol. 104 Issue 4, p044507 

    Transient reactions among irradiation defects, dopants, impurities, and carriers in pulse-neutron-irradiated Si were modeled taking into account the clustering of the primal defects in recoil cascades. Continuum equations describing the diffusion, field drift, and reactions of relevant species...

  • Search for effective sites of proximity gettering induced by ion implantation in Si wafers with first principles calculation. Sho Shirasawa; Koji Sueoka // Solid State Phenomena;2016, Vol. 242, p271 

    Fe, Ni and Cu atoms diffuse very quickly in Si and are the main targets for metal gettering. W, Hf, and Mo atoms, for example, which diffuse very slowly in Si have also recently become gettering targets in addition to these metals. Therefore, proximity gettering techniques by using ion...

  • High-energy ion-implantation-induced gettering of copper in silicon beyond the projected ion range: The trans-projected-range effect. Gueorguiev, Y. M.; Ko¨gler, R.; Peeva, A.; Mu¨cklich, A.; Panknin, D.; Yankov, R. A.; Skorupa, W. // Journal of Applied Physics;11/15/2000, Vol. 88 Issue 10 

    Five different species, namely B, Si, P, Ge, and As, were implanted at MeV energies into (100)-oriented n-type Czohralski Si, in order to form deep gettering layers during the subsequent annealing. Then the samples were contaminated with Cu by implanting the impurity on the backface and...

  • Thermal Acceptors in Irradiated Silicon. Stas�, V. F.; Antonova, I. V.; Neustroev, E. P.; Popov, V. P.; Smirnov, L. S. // Semiconductors;Feb2000, Vol. 34 Issue 2, p155 

    Comparative analysis of the conditions for the formation of shallow acceptor centers upon high-temperature annealing in silicon irradiated with electrons, neutrons, and energetic ions is performed. The introduction of a sufficiently large (in comparison with the initial concentration of...

  • Origin of infrared bands in neutron-irradiated silicon. Sarlis, N. V.; Londos, C. A.; Fytros, L. G. // Journal of Applied Physics;2/15/1997, Vol. 81 Issue 4, p1645 

    Infrared absorption measurements were made of the localized vibrational modes due to defects produced in Czochralski-grown Si material after irradiation with fast neutrons and subsequent thermal treatments. The investigation was focused, in particular, on three satellite bands in the region of...

  • Neutron-Irradiation-Induced Effects Caused by Divacancy Clusters with a Tetravacancy Core in Float-Zone Silicon. Ermolov, P. F.; Karmanov, D. E.; Leflat, A. K.; Manankov, V. M.; Merkin, M. M.; Shabalina, E. K. // Semiconductors;Oct2002, Vol. 36 Issue 10, p1114 

    It is shown that the representation of neutron-irradiation-produced defects in the form of divacancy D clusters with a tetravacancy core adequately describes the observed neutron-irradiation-produced effects in float-zone silicon. It is also predicted that the complete-depletion voltage...

  • On the correlation between high-order bands and some photoluminescence lines in neutron-irradiated FZ silicon. Zhong, Lei; Wang, Zhanguo; Wan, Shouke; Lin, Lanying // Journal of Applied Physics;10/15/1989, Vol. 66 Issue 8, p3787 

    Presents a study that investigated the defects in neutron irradiated float-zone silicon. Methodology; Correlation between high-order bands and some photoluminescence lines in the float-zone silicon; Analysis of the photoluminescence spectra of the samples.

  • Investigation of two infrared bands at 1032 and 1043 cm[sup -1] in neutron irradiated silicon. Londos, C. A.; Fytros, L. G. // Journal of Applied Physics;1/15/2001, Vol. 89 Issue 2, p928 

    We report on infrared (IR) studies of defects in Czochralski-grown silicon (Cz-Si) subjected to fast neutron irradiation and subsequent thermal anneals. We focus mainly on the investigation of the VO[sub 4] defect which, in the literature, has been correlated with the pair of bands (1032 and...

  • Point defect kinetics and dopant diffusion during silicon oxidation. Mathiot, D.; Pfister, J. C. // Applied Physics Letters;3/10/1986, Vol. 48 Issue 10, p627 

    Using a full calculation including all the couplings between the dopants and the point defects, we show that the transient effect observed at short times for the influence of oxidation on dopant diffusion in Si cannot be explained by the existence of an energy barrier to the recombination of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics