Influence of hydrogen on the electrical and optical activity of misfit dislocations in Si/SiGe

Higgs, V.; Kittler, M.
November 1994
Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2804
Academic Journal
Examines the misfit dislocations in silicon/silicon germanide (SiGe) epilayers following hydrogen plasma treatment. Usage of photoluminescence spectroscopy and electron-beam-induced current; Passivation of misfit dislocation and deeper midgap levels; Growth of SiGe epilayers; Role of residual transition metal in passivation.


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