TITLE

Precipitation in Fe- or Ni-implanted and annealed GaAs

AUTHOR(S)
Chang, J.C.P.; Otsuka, N.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2801
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the formation of metal/semiconductor composites by ion implantation of iron and nitrogen into gallium arsenide. Characteristics of the precipitates as indicated by electron diffraction experiments; Correlation of the electrical and structural properties of annealed samples; Impact of precipitation on the matrix strain.
ACCESSION #
4233197

 

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