TITLE

Electrospray organometallic chemical vapor deposition--A novel technique for preparation of

AUTHOR(S)
Danek, M.; Jensen, K.F.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2795
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Develops a technique combining electrospray and organometallic chemical vapor deposition (OMCVD) for II-IV quantum dot composite synthesis. Transmission of nanocrystals by electrospray into OMVCD reactor growth zone; Characteristics of nanocrystal dispersion optical transition; Characterization of the composites by Auger electron spectroscopy.
ACCESSION #
4233195

 

Related Articles

  • Modeling and characterization of InAs/GaAs quantum dot lasers grown using metal organic chemical vapor deposition. Sears, K.; Buda, M.; Tan, H. H.; Jagadish, C. // Journal of Applied Physics;1/1/2007, Vol. 101 Issue 1, p013112 

    We report on the lasing characteristics of three- and five-stack InAs/GaAs quantum dot (QD) lasers grown by metal organic chemical vapor deposition. By increasing the number of stacked dot layers to 5, lasing was achieved from the ground state at 1135 nm for device lengths as short as 1.5 mm (no...

  • Temporal evolution of GaSb/GaAs quantum dot formation. Mu¨ller-Kirsch, L.; Heitz, R.; Pohl, U. W.; Bimberg, D.; Ha¨usler, I.; Kirmse, H.; Neumann, W. // Applied Physics Letters;8/13/2001, Vol. 79 Issue 7 

    The formation of GaSb quantum dots in a GaAs matrix in the Stranski–Krastanow growth mode under metalorganic chemical vapor deposition conditions is investigated. Transmission electron microscopical images and photoluminescence measurements show the islands to nucleate during the GaSb...

  • Self-organized InAs quantum dots formation by As/P exchange reaction on (001) InP substrate. Wang, Benzhong; Zhao, Fanghai; Peng, Yuheng; Jin, Zhi; Li, Yudong; Liu, Shiyong // Applied Physics Letters;5/11/1998, Vol. 72 Issue 19 

    In this letter, we present the results of InAs quantum dots (QDs) prepared on a (001) InP substrate. As/P exchange reaction at the surface of InP buffer was used to form the InAs islands in the reactor of low pressure metalorganic chemical vapor deposition at 600 °C. Preliminary...

  • Highly uniform InGaAs/GaAs quantum dots (approximately 15 nm) by metalorganic chemical vapor.... Oshinowo, J.; Nishioka, M. // Applied Physics Letters;9/12/1994, Vol. 65 Issue 11, p1421 

    Presents the deposition of strained indium gallium arsenide-dot structures by metalorganic chemical vapor deposition. Formation of highly uniform quantum-sized dots by Stranski-Krastanow growth mode; Indication of able carrier capture and homogeneous heterointerface by photoluminescence...

  • In situ observation on electron beam induced chemical vapor deposition by Auger electron spectroscopy. Matsui, Shinji; Mori, Katsumi // Applied Physics Letters;8/31/1987, Vol. 51 Issue 9, p646 

    W deposition, using WF6 gas source by electron beam induced surface reaction, has been studied by Auger electron spectroscopy. W Auger electron signals have been observed for WF6 adlayer by Auger electron spectroscopy. Moreover, initial growth for W deposition has been observed in situ by Auger...

  • Wavelength control from 1.25 to 1.4 μm in In[sub x]Ga[sub 1-x]As quantum dot structures grown by metal organic chemical vapor deposition. Passaseo, A.; Maruccio, G.; De Vittorio, M.; Rinaldi, R.; Cingolani, R.; Lomascolo, M. // Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1382 

    This letter reports on the realization of long-wavelength InGaAs quantum dots (QDs) fabricated by metal organic chemical vapor deposition. By controlling the In incorporation in the QD layers and/or in the barrier embedding the QDs, we are able to tune the wavelength emission continuously from...

  • Proton-irradiation-induced intermixing of InGaAs quantum dots. Lever, P.; Tan, H. H.; Jagadish, C.; Reece, P.; Gal, M. // Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2053 

    Proton irradiation was used to create interdiffusion in In[SUB0.5]Ga[SUB0.5]As quantum dots (QDs), grown by low-pressure metalorganic chemical vapor deposition. After 25-keV proton irradiation, the QD samples were annealed at two temperatures (700 or 750°C) for 30 s. It was found that much...

  • Self-organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition. Heinrichsdorff, F.; Krost, A.; Grundmann, M.; Bimberg, D.; Kosogov, A.; Werner, P. // Applied Physics Letters;6/3/1996, Vol. 68 Issue 23, p3284 

    Examines the self-organization processes of indium gallium arsenide (GaAs)/GaAs quantum dots grown by metal-organic chemical vapor deposition. Dependence of quantum dot density on substrate temperature; Preferential relative alignment of dots along the direction; Factors affecting the dot...

  • Resonant tunneling through a self-assembled Si quantum dot. Fukuda, M.; Nakagawa, K.; Miyazaki, S.; Hirose, M. // Applied Physics Letters;4/28/1997, Vol. 70 Issue 17, p2291 

    Examines the silicon quantum dots fabricated on silicon dioxide by controlling the early stages of low-pressure chemical vapor deposition from pure silane. Use of atomic force microscopy to study the electron tunneling through a single quantum dot; Explanation of observed current-voltage...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics