Temperature behavior of a bulk InGaAsP/InP ridge waveguide structure for polarization

Pajarola, S.; Eckner, J.
November 1994
Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2762
Academic Journal
Investigates the temperature behavior of indium gallium arsenic phosphide/indium phosphide ridge waveguide structure designed for polarization insensitive semiconductor optical amplifier. Accounts on laser threshold dependence on temperature; Usage of diode structure in the experiment; Discussion on the physical origins of temperature dependence.


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