TITLE

Coupled semiconductor microcavities

AUTHOR(S)
Stanley, R.P.; Houdre, R.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/17/1994, Vol. 65 Issue 16, p2093
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines coupled semiconductor microcavities using molecular beam epitaxy. Composition of coupled semiconductor microcavity; Development of strongly coupled modes allowing wide design range for optoelectronic applications; Use of vertical cavity surface emitting lasers as solution to the optical interconnect problem.
ACCESSION #
4233177

 

Related Articles

  • Carbon doping of AlAs using CCl[sub 4] and CBr[sub 4] during growth by metalorganic.... Abernathy, C.R.; MacKenzie, J.D. // Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2205 

    Investigates the carbon doping of AlAs using CCl[sub 4] and CBr[sub 4] during growth by metalorganic molecular-beam epitaxy. Achievement of hole concentration in as-deposited AlAs layers; Effect of the attempt to increase hole concentration in as-grown material on hole concentration; Method of...

  • Free hole gas and its coupling to phonons in ZnSe:Li layers. Olego, D.J.; Petruzzello, J.; Marshall, T.; Cammack, D. // Applied Physics Letters;8/19/1991, Vol. 59 Issue 8, p961 

    Examines the presence and coupling of free hole gas to longitudinal optical phonons in lithium doped zinc selenide semiconductor layers. Growth of layers by molecular beam epitaxy on gallium arsenide substrates; Impact of temperature on phonon spectra; Values for the hole concentration and...

  • Hydrogenation of p-type gallium nitride. Brandt, M.S.; Johnson, N.M. // Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2264 

    Determines the effect of hydrogen on the hole concentration of molecular beam epitaxy grown magnesium doped gallium nitride (GaN). Application of Hall measurements and secondary ion mass spectrometry; Verification of hydrogen concentration in doped GaN; Determination of hydrogen effects in GaN...

  • Self-Assembling of Ge Quantum Dots in the CaF[sub 2]/Ge/CaF[sub 2]/Si Heteroepitaxial System and the Development of Tunnel-Resonance Diode on Its Basis. Sokolov, L.V.; Deryabin, A.S.; Yakimov, A.I.; Pchelyakov, O.P.; Dvurechenski&icaron;, A.V. // Physics of the Solid State;Jan2004, Vol. 46 Issue 1, p89 

    A CaF[sub 2]/Ge/CaF[sub 2]/Si(111) heteroepitaxial structure with Ge quantum dots was grown by molecular-beam epitaxy. A negative differential conductivity and conductivity oscillations caused by resonant hole tunneling were observed at room temperature. The energy spacing between the levels in...

  • Hole trapping time measurement in low-temperature-grown gallium arsenide. Adomavičius, R.; Krotkus, A.; Bertulis, K.; Sirutkaitis, V.; Butkus, R.; Piskarskas, A. // Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5304 

    We study hole dynamics in GaAs layers grown by molecular-beam epitaxy at 270 °C by two-color pump-and-probe experiments employing femtosecond 800-nm-wavelength pulses for sample’s excitation and 9-μm-wavelength pulses for probing the induced intervalence band absorption. Hole...

  • Direct detection and imaging of low-energy electrons with delta-doped charge-coupled devices. Nikzad, Shouleh; Yu, Qiuming; Smith, Aime´e L.; Jones, Todd J.; Tombrello, T. A.; Elliott, S. Tom // Applied Physics Letters;12/7/1998, Vol. 73 Issue 23 

    We report the use of delta-doped charge-coupled devices (CCDs) for direct detection of electrons in the 50–1500 eV energy range. We show that modification of the CCD back surface by molecular beam epitaxy can greatly improve sensitivity to low-energy electrons by introducing an atomically...

  • Traps in molecular-beam epitaxial In0.53(GaxAl1-x)0.47As/InP. Biswas, Dipankar; Chin, Albert; Pamulapati, Jagadeesh; Bhattacharya, Pallab // Journal of Applied Physics;3/1/1990, Vol. 67 Issue 5, p2450 

    Discusses a study on electron and hole traps in molecular-beam epitaxy (MBE) InGaAlAs alloys with varying composition. Role of deep energy levels in evaluating the quality of semiconductor materials; Experimental techniques; Results and discussion.

  • Two-terminal bias induced dual wavelength semiconductor light emitter. Zhang, D.; Reed, F.E. // Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3367 

    Examines the two-terminal bias induced color tunable emitter (BICE) operation. Basis on the bias dependent injection and collection of electrons and holes in quantum wells; Growth of BICE structure by molecular beam epitaxy; Application of BICE concept in wavelength division multiplexing and...

  • Hole trap generation by thermal treatment of nitrogen doped p-type ZnSe on GaAs characterized by.... Hellig, K.; Prosch, G. // Applied Physics Letters;10/13/1997, Vol. 71 Issue 15, p2187 

    Investigates the influence of thermal treatment on hole trap generation in nitrogen doped zinc selenide capped with gallium arsenide. Use of deep level transient spectroscopy; Application of radio frequency nitrogen plasma during molecular beam epitaxial growth; Dependence of temperature on the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics