TITLE

Defect passivation in multicrystalline-Si materials by plasma-enhanced chemical vapor deposition

AUTHOR(S)
Chen, Z.; Rohatgi, A.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/17/1994, Vol. 65 Issue 16, p2078
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Develops plasma-enhanced chemical vapor deposition (PECVD) for defect passivation of multicrystalline silicon materials. Fabrication of solar cells using a three-layer PECVD coating; Quantification of the bulk and surface passivation effects; Discussion on combining internal quantum efficiency measurements and computer modeling.
ACCESSION #
4233172

 

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