TITLE

Comparison of Be and C diffusion in heavily doped polycrystalline GaAs

AUTHOR(S)
Mochizuki, Kazuhiro; Nakamura, Tohru
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/17/1994, Vol. 65 Issue 16, p2066
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Compares beryllium (Be) and carbon (C) diffusion in heavily doped polycrystalline gallium arsenide (GaAs) grown by molecular beam epitaxy. Discussion on concentration-depth profiles of Be in AlGaAs/GaAs heterojunction bipolar transition layers; Resistivity of C-doped GaAs; Change in occupation site preference of C atoms from As sites.
ACCESSION #
4233168

 

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