Comparison of Be and C diffusion in heavily doped polycrystalline GaAs

Mochizuki, Kazuhiro; Nakamura, Tohru
October 1994
Applied Physics Letters;10/17/1994, Vol. 65 Issue 16, p2066
Academic Journal
Compares beryllium (Be) and carbon (C) diffusion in heavily doped polycrystalline gallium arsenide (GaAs) grown by molecular beam epitaxy. Discussion on concentration-depth profiles of Be in AlGaAs/GaAs heterojunction bipolar transition layers; Resistivity of C-doped GaAs; Change in occupation site preference of C atoms from As sites.


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