TITLE

InAs island-induced-strain driven adatom migration during GaAs overlayer growth

AUTHOR(S)
Qianghua Xie; Chen, P.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/17/1994, Vol. 65 Issue 16, p2051
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Focuses on the impact of indium arsenide island induced strain fields on adatom migration during subsequent gallium arsenide cap layer growth. Presence of strain dominated atom migration away from the islands; Anisotropy in the length scale of impact between directions; Formulation of the classical theory of grain growth.
ACCESSION #
4233163

 

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