TITLE

Phonon-assisted carrier capture into a quantum well in an electric field

AUTHOR(S)
Thibaudeau, L.; Vinter, B.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/17/1994, Vol. 65 Issue 16, p2039
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the capture of electrons in a quantum well (QW) by phonon scattering. Presentation of calculated electron wave function shape; Examination of carrier capture mechanisms in QW for unbiased structures; Expression for time constant associated with exchange of electrons between fundamental ground and continuum states.
ACCESSION #
4233159

 

Related Articles

  • Quantum state transfer in double-quantum-well devices. Jakumeit, Jürgen; Tutt, Marcel; Pavlidis, Dimitris // Journal of Applied Physics;12/1/1994, Vol. 76 Issue 11, p7428 

    Describes the quantum state transfer (QST) in double-quantum-well devices. Role of the impurity scattering for the QST; Approaches used for the optimization of QST devices; Maximum transfer of electrons.

  • Alloy scattering limited transport of two-dimensional carriers in strained Si[sub 1-x]Ge[sub x].... Venkataraman, V.; Liu, C.W. // Applied Physics Letters;11/15/1993, Vol. 63 Issue 20, p2795 

    Examines the alloy scattering limited transport of two-dimensional electrons in strained Si[sub 1-x]Ge[sub x] quantum wells. Dependence of mobility on carrier concentration; Growth of the modulation-doped structures by rapid thermal chemical vapor deposition; Indication of electron gas presence...

  • Time-resolved study of intervalence band thermalization in a GaAs quantum well. Kim, A.M.T.; Hunsche, S. // Applied Physics Letters;5/20/1996, Vol. 68 Issue 21, p2956 

    Investigates the thermalization of optically excited cold holes in a gallium arsenide quantum well. Use of femtosecond two-color pump-probe measurements; Evidence for scattering from heavy-holes into the light-hole band; Dependence of scattering time on lattice temperature.

  • Alloy scattering-limited mobility in narrow quantum wells. Mukhopadhyay, Sanghamitra; Nag, B.R. // Applied Physics Letters;6/8/1992, Vol. 60 Issue 23, p2897 

    Calculates the alloy scattering-limited mobility in narrow quantum wells. Effects of wave function penetration into the band; Accounts of the energy-band nonparabolicity; Variation in quantum well mobility.

  • Ultrafast transient absorption measurement of the electron-LO phonon scattering time in.... Collings, D.; Schumacher, K.L. // Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p889 

    Determines the electron-LO phonon scattering time in GaAs-Al[sub 0.33]Ga[sub 0.67]As multiple quantum well. Use of ultrafast transient absorption method at low excitation density; Growth of quantum well structure by molecular beam epitaxy; Observation of width and height evolution of electron...

  • Effect of electric field on low temperature multisubband electron mobility in a coupled Ga0.5In0.5P/GaAs quantum well structure. Sahu, Trinath; Shore, K. Alan // Journal of Applied Physics;Jun2010, Vol. 107 Issue 11, p113708 

    The effect of uniform electric field on low temperature (T=0 K) multisubband electron mobility μi is analyzed by considering a barrier delta-doped Ga0.5In0.5P/GaAs coupled double quantum well structure. We consider ionized impurity scattering and interface roughness (IR) scattering. The...

  • Evidence for heavy ion channeling in AlGaAs at low energies. Stoffel, N.G.; Schwarz, S.A. // Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1603 

    Examines the occurrence of heavy, low-energy ion scattering in open(011) axial channels of multiquantum well structure. Use of molecular dynamics simulation program for ion channeling modeling; Determination of ion profile by secondary ion mass spectrometry; Influence of channeling on optical...

  • Interface roughness scattering in InAs/AlSb quantum wells. Bolognesi, C.R.; Kroemer, H. // Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p213 

    Investigates interface roughness scattering in indium arsenide and aluminum antimonide quantum wells. Contribution of the roughness scattering on the low-temperature mobility; Inclusion of band nonparabolicity of indium arsenide in the measurement of mobilities; Dependence of the measured...

  • Exciton linewidth due to scattering by free carriers in semiconducting quantum well structure... Koh, Tong San; Feng, Yuan Ping // Journal of Applied Physics;3/1/1997, Vol. 81 Issue 5, p2236 

    Studies the broadening of exciton linewidth due to scattering by free carriers in semiconducting quantum well structures. Dependence of broadening on carrier, concentration and well width scattering; Ionization scattering of the exciton.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics