Synchrotron radiation photoelectron spectroscopy study for GaAs (001) surface prepared by

Hirota, Y.; Ogino, T.
October 1994
Applied Physics Letters;10/17/1994, Vol. 65 Issue 16, p2036
Academic Journal
Investigates thermal effects on n-type gallium arsenide (GaAs) (001) surface prepared by deoxygenated and de-ionized water treatment (DODIW). Use of synchrotron-radiation photoelectron spectroscopy in studying GaAs (001) surface; Evidence of excess elemental arsenic on the surface; Attainment of low-density surface state by DODIW-treated GaAs surface.


Related Articles

  • Damage profile of ion-implanted GaAs by x-ray photoelectron spectroscopy. Lu, Z. H.; Azelmad, A.; Trudeau, Y.; Yelon, A. // Applied Physics Letters;8/28/1989, Vol. 55 Issue 9, p846 

    We report on the use of x-ray photoelectron spectroscopy for the investigation of radiation damage in GaAs. The technique has been used to profile the damage induced by 7 MeV Si+ ions. Arsenic displaced by the ions is found in an interstitial elementary state. Using chemical etching, we are able...

  • Electrical properties in arsenic-ion-implanted GaAs. Chen, Wen-Chung; Chang, C.-S. // Journal of Applied Physics;8/1/1996, Vol. 80 Issue 3, p1600 

    Discusses a study that examined the electrical properties in arsenic-ion-implanted gallium arsenide. Use of x-ray photoelectron spectroscopy to investigate a series of band diagrams of arsenic-ion-implanted films; Experimental details; Conclusion of the study.

  • Auger photoelectron coincidence spectroscopy using synchrotron radiation. Jensen, E.; Bartynski, R. A.; Hulbert, S. L.; Johnson, E. D. // Review of Scientific Instruments;May92, Vol. 63 Issue 5, p3013 

    The technique of Auger photoelectron coincidence spectroscopy (APECS) using synchrotron radiation is discussed. Technical considerations and experimental details are emphasized. Results from Cu(100), Ta(100), and Al(111) are presented to show the kinds of new information that APECS can provide.

  • Erratum: 'Study of Au/Hg3In2Te6 interface by synchrotron radiation photoemission spectroscopy' [J. Appl. Phys. 114, 083719 (2013)]. Sun, Jie; Fu, Li; Wang, Yiyi; Ren, Jie; Li, Yapeng; Zhang, Wenhua; Zhu, Junfa // Journal of Applied Physics;Sep2013, Vol. 114 Issue 12, p129901 

    A correction to the article "'Study of Au/Hg3In2Te6 Interface by Synchrotron Radiation Photoemission Spectroscopy" by Jie Sun, published online on September 24, 2013, is presented.

  • A study of O2(a1...g) with photoelectron spectroscopy using.... Barr, Jonathan D.; De Fanis, Alberto // Journal of Chemical Physics;8/15/1998, Vol. 109 Issue 7, p2737 

    Investigates oxygen (a1...g) through photoelectron spectroscopy using synchrotron radiation. Explanation of vacuum ultraviolet photoionization of oxygen; Importance of the first excited state of oxygen; Function of the phase-sensitive method.

  • Threshold photoelectron spectroscopy using synchrotron radiation. King, G. C.; Yencha, A. J.; Lopes, M. C. A. // AIP Conference Proceedings;2001, Vol. 576 Issue 1, p703 

    Recent developments in the techniques of threshold photoelectron spectroscopy using synchrotron radiation are discussed. The types of information that such studies can provide about molecules are considered. Examples of current experimental techniques of threshold spectroscopy are given in the...

  • Sample size effect in photoelectrochemical etching of n-GaAs. Ma, Qing; Moldovan, Nicolaie; Mancini, Derrick C.; Rosenberg, Richard A. // Applied Physics Letters;8/28/2000, Vol. 77 Issue 9 

    A sample size effect on the etching rate in the photoelectrochemical etching of n-GaAs is demonstrated using synchrotron radiation x rays as the light source. It is shown that the etching rate increases significantly with the ratio of sample size to x-ray illuminated area. The rate-limiting...

  • In situ x-ray photoelectron spectroscopic study of GaAs grown by atomic layer epitaxy. Kodama, K.; Ozeki, M.; Mochizuki, K.; Ohtsuka, N. // Applied Physics Letters;2/13/1989, Vol. 54 Issue 7, p656 

    We carried out an in situ investigation of GaAs grown by atomic layer epitaxy, using an x-ray photoelectron spectroscopy system combined with a metalorganic vapor phase epitaxial growth chamber, where Ga(CH3)3 and AsH3 were the source gases. It has been proved that Ga(CH3)n molecules (where n=1...

  • X-ray photoelectron spectroscopy study of the effects of ultrapure water on GaAs. Massies, J.; Contour, J. P. // Applied Physics Letters;6/15/1985, Vol. 46 Issue 12, p1150 

    X-ray photoelectron spectroscopy has been used to investigate the effects of de-ionized water on chemical etched GaAs surfaces. When the treatment with water is performed in static conditions (stagnant water) a Ga-rich oxide layer is formed on GaAs at the rate of 10–20 Å h-1. In...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics