Activation energy for C94 and C54 TiSi[sub 2] formation measured during rapid thermal annealing

Colgan, E.G.; Clevenger, L.A.
October 1994
Applied Physics Letters;10/17/1994, Vol. 65 Issue 16, p2009
Academic Journal
Measures activation energies for C49 and C54 titanium disilicide formation during rapid thermal annealing. Resistivity of gate and local interconnect metallizations in integrated circuits; Measurement of temperature corresponding to a fixed stage of transformation; Evaporation of titanium films on undoped polycrystalline silicon.


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