Platinumsilicide Schottky barrier infrared detectors with a grating: Dependence of the optical

Kapser, K.; Deimel, P.P.
October 1994
Applied Physics Letters;10/17/1994, Vol. 65 Issue 16, p1986
Academic Journal
Examines the fabrication of platinumsilicide Schottky diodes on p-silicon substrates structured with a dry-etched lamellar grating. Dependence of detector sensitivity on the polarization of the radiation; Enhancement of responsivity up to 70%; Comparison of reference diodes from different wafers.


Related Articles

  • Temperature dependence of Schottky barrier heights on silicon. Werner, Jürgen H.; Güttler, Herbert H. // Journal of Applied Physics;2/1/1993, Vol. 73 Issue 3, p1315 

    Presents information on a study which investigated the temperature dependence of Schottky barrier heights on silicon. Experimental procedures; Measurement of temperature coefficients; Discussion of the results.

  • Photoinduced degradation of reverse-biased small-area a-Si:H Schottky barriers. Hanrieder, Wolfgang; Mader, Gerhard; Meixner, Hans // Journal of Applied Physics;4/15/1988, Vol. 63 Issue 8, p2681 

    Deals with a study which investigated photoinduced changes in the photocurrent and dark current of a reverse-biased small-area Schottky barrier made from amorphous silicon. Results and discussion.

  • A High resolution Si position sensor. Scott, K.A.M.; Sharma, A.K.; Wilson, C.M.; Mullins, B.W.; Soares, S.F.; Brueck, S.R.J. // Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3141 

    Describes the planar back-to-back Schottky-barrier silicon position sensor. Vibration-limited optical-position sensitivity of the device; Relation between circuit photocurrent response and detector gap; Response time of the unbiased device.

  • Effect of interfaces on the electrical behavior of (Pb[sub 0.72]La[sub 0.28])TiO[sub 3] thin films. Lee, J.J.; Alluri, P. // Applied Physics Letters;10/17/1994, Vol. 65 Issue 16, p2027 

    Examines the deposition of paraelectric (lead-lanthanum)titanium trioxide (PLT) thin films on platinum coated silicon substrates by the sol-gel technique. Formation of Ohmic and Schottky contacts; Determination of a Schottky barrier height of 1.83 eV at the platinum-PLT interface; Modification...

  • Schottky barriers of epitaxial NiSi2 on Si(111). Ospelt, M.; Henz, J.; Flepp, L.; von Känel, H. // Applied Physics Letters;1/18/1988, Vol. 52 Issue 3, p227 

    We have investigated the Schottky-barrier heights of high-quality epitaxial type-A- and type-B-oriented NiSi2 on n-doped Si(111). Current-voltage and photoresponse techniques have been used. The barrier height of type-A NiSi2 is found to be low (0.64 eV), whereas type-B NiSi2 yields a high...

  • Silicide/silicon Schottky barriers under hydrostatic pressure. Werner, Jürgen H. // Applied Physics Letters;4/17/1989, Vol. 54 Issue 16, p1528 

    We investigate several silicide/silicon Schottky barrier heights under hydrostatic pressures up to 10 kbar. The barriers of polycrystalline TiSi2, PtSi, and WTi on n-type Si decrease with -1.l3, -1.35, and -1.42 meV/kbar, respectively. The coefficients for A- and B-type NiSi2/Si amount to -0.77...

  • Thermal Stability and Radiation Hardness of SiC-Based Schottky-Barrier Diodes. Afanas’ev, A. V.; Il’in, V. A.; Kazarin, I. G.; Petrov, A. A. // Technical Physics;May2001, Vol. 46 Issue 5, p584 

    Pt/W/Cr/SiC Schottky-barrier diodes that retain good electrophysical parameters up to 450°C are studied. With the Auger electron spectroscopy (AES) method, it is shown that the thermal stability is provided by using a multilayer metal composition that ensures the metal/SiC interface...

  • Schottky barrier diode on a submicron-thick silicon membrane using a dual surface fabrication technique. Lee, Kevin; Silcox, J.; Lee, C. A. // Journal of Applied Physics;12/1/1986, Vol. 60 Issue 11, p4038 

    Describes the successful fabrication of a Schottky barrier diode on a 150 nanometer thick single-crystal silicon membrane using a dual surface technique. Techniques in producing device quality semiconductors; Details on the experimental procedure; Discussion on the results of the study.

  • Characterization of hydrogenated amorphous silicon by capacitance-voltage and surface photovoltage measurements using liquid Schottky barriers. Sakata, I.; Ishida, T.; Okazaki, S.; Saitoh, T.; Yamanaka, M.; Hayashi, Y. // Journal of Applied Physics;3/1/1987, Vol. 61 Issue 5, p1916 

    Presents information on a study which investigated the electrical characterization of amorphous silicon (a-Si:H) using a liquid Schottky barrier. Advantages of using the surface photovoltage method using a liquid Schottky barrier; Properties of a-Si:H and crystalline (c) Si contacts with redox...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics