Critical currents of YBa[sub 2]Cu[sub 3]O[sub y] thick films prepared by liquid phase epitaxial

Yoshida, Manabu; Nakamoto, Takao
September 1994
Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1714
Academic Journal
Investigates the success in preparing c-axis oriented high-current density YBa[sub 2]Cu[sub 3]O[sub y] thick films on magnesium oxide(100) substrates by liquid phase epitaxy. Measurement of the film growth rate; Observation on the peak effect of current density; Cause of relevant peak effect; Examination on the microstructure of the films.


Related Articles

  • Y1Ba2Cu3O7-x thin films grown on sapphire with epitaxial MgO buffer layers. Berezin, A. B.; Yuan, C. W.; de Lozanne, A. L. // Applied Physics Letters;7/2/1990, Vol. 57 Issue 1, p90 

    We have developed a process for growing as-deposited Y1Ba2Cu3O7-x (YBCO) thin films on R-plane sapphire substrates with an intermediate layer of epitaxial MgO. The orientation of the layers has YBCO (001) parallel to MgO (100) which is parallel to the substrate normal. These films are...

  • Interplay between crystallographic orientation and electric transport properties in La2/3Sr1/3MnO3 films. Tebano, A.; Orsini, A.; Di Castro, D.; Medaglia, P. G.; Balestrino, G. // Applied Physics Letters;3/1/2010, Vol. 96 Issue 9, p092505 

    The effect of crystallographic interface orientation on the electric transport properties of fully strained La2/3Sr1/3MnO3 films grown onto LaAlO3 substrates has been investigated. It is found that, relative to the (001) orientation, the (110) orientation strongly enhances the transport...

  • MgO epitaxial thin films on (100) GaAs as a substrate for the growth of oriented PbTiO[sub 3]. Wei-Yung Hsu; Raj, Rishi // Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3105 

    Examines the epitaxial growth of manganese oxide thin films on gallium arsenide by reactive radio frequency planar magnetron sputtering. Alignment and orientation of the films; Measurement of the film refractive index; Sensitivity of the growth rate to the substrate temperature.

  • Control and elimination of biaxial strain in laser-ablated epitaxial Ba[sub x]Sr[sub 1-x]TiO[sub 3] films. Carlson, Chris M.; Parilla, Philip A.; Rivkin, Tanya V.; Perkins, John D.; Ginley, David S. // Applied Physics Letters;11/13/2000, Vol. 77 Issue 20 

    We report the in-plane (a) and out-of-plane (c) lattice parameters of epitaxial laser-ablated Ba[sub 0.4]Sr[sub 0.6]TiO[sub 3] films on MgO for a range of O[sub 2] deposition pressures (40-250 mTorr) near the observed transition from ac. From these lattice parameters, we calculate the...

  • Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation. Zhang, Wei; Roesel, Stephan; Alves, Helder R.; Meister, Dirk; Kriegseis, Wilhelm; Hofmann, Detlev M.; Meyer, Bruno K.; Riemann, Till; Veit, Peter; Blaesing, Juergen; Krost, Alois; Christen, Juergen // Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p772 

    Thick GaN layers have been deposited on c-Al[sub 2]O[sub 3] (0001) substrates using hydride vapor phase epitaxy by modulating the growth process via switching on/off GaN growth. Cathodoluminescence and transmission electron microscopy images of the cross-sectional structure show that there are...

  • GaN evaporation in molecular-beam epitaxy environment. Grandjean, N.; Massies, J.; Semond, F.; Karpov, S. Yu.; Talalaev, R.A. // Applied Physics Letters;3/29/1999, Vol. 74 Issue 13, p1854 

    Reports that GaN(0001) thick layers were grown on c-plane sapphire substrates by molecular beam epitaxy using NH[sub 3]. Study of the evaporation of the GaN layers in vacuum as a function of substrate temperature; Use of in situ laser reflectivity to measure the decomposition rate of the...

  • Room Temperature Ammonia Gas Sensing Using MnO2-Modified ZnO Thick Film Resistors. Patil, Lalchand A.; Sonawane, Lalita S.; Patil, Dhanashri G. // Journal of Modern Physics (21531196);Oct2011, Vol. 2 Issue 10, p1215 

    Pure ZnO thick film, prepared by screen-printing technique, was almost insensitive to NH3. Pure ZnO thick films were surface modified with MnO2 by dipping them into 0.01 M aqueous solution of manganese chloride (MnCl2) for different intervals of time and fired at 500°C for 12 h. The grains of...

  • Overcoming the pseudomorphic critical thickness limit using compliant substrates. Chua, C.L.; Hsu, W.Y. // Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3640 

    Demonstrates the high-quality molecular beam epitaxy growth of thick In[sub 0.14]Ga[sub 0.86]As layers on thin, free-standing, compliant gallium arsenide substrates. Distribution of strain between the substrate and the layer; Fabrication of the compliant platforms; Reasons for the broadening of...

  • Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the.... Singh, R.; Doppalapudi, D. // Applied Physics Letters;3/3/1997, Vol. 70 Issue 9, p1089 

    Examines growth of InGaN thick films and InGaN/GaN double heterostructures through molecular beam epitaxy. Types of InGaN films studied; Analysis of x-ray diffraction data of InGan films and heterostructures; Description of phase separation model in InN-GaN binary system.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics