Heteroepitaxial Si/Si[sub 1-x]Ge[sub x]/Si structures produced using pulsed UV-laser processing

Kramer, K.-Josef; Talwar, Somit
September 1994
Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1709
Academic Journal
Demonstrates the applicability of ultraviolet-laser processing to the fabrication of structures heteroepitaxially regrown a-silicon. Creation of the structures of boron-doped Si[sub 1-x]Ge[sub x] on silicon(100); Observation of backdiffusion from the Si[sub 1-x]Ge[sub x] films to the top silicon layer; Evaporation of the amorphous germanium thin films.


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