TITLE

Fabrication of p-channel polycrystalline Si[sub 1-x]Ge[sub x] thin-film transistors by ultrahigh

AUTHOR(S)
Horng-Chih Lin; Tze-Guei Jung
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1700
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents an approach for fabricating polycrystalline silicon-germanium thin-film transistor at low temperatures. Deposition of the silicon-germanium multilayer on the gate oxide; Achievement of thin-film transistors with field-effect mobility; Elimination of the post-ion-implantation annealing and the recrystallization steps.
ACCESSION #
4233131

 

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