TITLE

Morphological transition of InAs islands on GaAs(001) upon deposition of a GaAs capping layer

AUTHOR(S)
Lin, X.W.; Washburn, J.
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1677
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the interaction between a gallium arsenide and indium arsenide islands grown on vicinal gallium arsenide(001) by transmission electron microscopy. Morphological transition of the indium arsenide islands; Disappearance of indium arsenide islands in the central area of disk-shaped islands; Formation of crater-like surface depressions.
ACCESSION #
4233123

 

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