Morphological transition of InAs islands on GaAs(001) upon deposition of a GaAs capping layer

Lin, X.W.; Washburn, J.
September 1994
Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1677
Academic Journal
Examines the interaction between a gallium arsenide and indium arsenide islands grown on vicinal gallium arsenide(001) by transmission electron microscopy. Morphological transition of the indium arsenide islands; Disappearance of indium arsenide islands in the central area of disk-shaped islands; Formation of crater-like surface depressions.


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