TITLE

Determination of excess phosphorous in low-temperature GaP grown by gas source molecular beam

AUTHOR(S)
He, Y.; El-Masry, N.A.
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1671
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the quantitative determination of the excess phosphorus in low temperature gallium phosphide films grown epitaxially. Measurement and definition of the excess phosphorus; Formation of lattice expansion to bulk gallium phosphide; Presence of excess phosphorus in the epilayers of the films.
ACCESSION #
4233121

 

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