Determination of excess phosphorous in low-temperature GaP grown by gas source molecular beam

He, Y.; El-Masry, N.A.
September 1994
Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1671
Academic Journal
Presents the quantitative determination of the excess phosphorus in low temperature gallium phosphide films grown epitaxially. Measurement and definition of the excess phosphorus; Formation of lattice expansion to bulk gallium phosphide; Presence of excess phosphorus in the epilayers of the films.


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