Intense erbium-1.54-mum photoluminescence from 2 to 525 K in ion-implanted 4H, 6H, 15R, and 3C SiC

Choyke, W.J.; Devaty, R.P.
September 1994
Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1668
Academic Journal
Examines the intense photoluminescence in the neighborhood of 1.54 micrometer from erbium-implanted samples of silicon carbide polytypes. Variation on the temperature dependence of the integrated luminescence intensity; Production of 1.54 micrometer light emitting diodes and lasers; Examination of sharp line structure at room temperature.


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