Dielectric strength of thermal oxides on 6H-SiC and 4H-SiC

Friedrichs, P.; Burte, E.P.
September 1994
Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1665
Academic Journal
Presents the dielectric strength of oxide layers formed by thermal oxidation of silicon carbide. Measurement of the dielectric strength; Exhibition of superior quality by dry oxide; Identification of limiting current mechanism in oxide; Determination of the corresponding barrier heights between silicon carbide polytypes and thermal silicon dioxide.


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