TITLE

Dielectric strength of thermal oxides on 6H-SiC and 4H-SiC

AUTHOR(S)
Friedrichs, P.; Burte, E.P.
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1665
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the dielectric strength of oxide layers formed by thermal oxidation of silicon carbide. Measurement of the dielectric strength; Exhibition of superior quality by dry oxide; Identification of limiting current mechanism in oxide; Determination of the corresponding barrier heights between silicon carbide polytypes and thermal silicon dioxide.
ACCESSION #
4233119

 

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