Site-competition epitaxy for superior silicon carbide electronics

Larkin, David J.; Neudeck, Philip G.
September 1994
Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1659
Academic Journal
Presents a dopant control technique for compound semiconductors called site-competition epitaxy. Demonstration of wider range of reproducible doping control and doping concentration; Production of degenerately doped silicon carbide epilayers for ohmic contacts; Exhibition of record-breaking reverse voltages by an electronic device.


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