TITLE

Site-competition epitaxy for superior silicon carbide electronics

AUTHOR(S)
Larkin, David J.; Neudeck, Philip G.
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1659
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a dopant control technique for compound semiconductors called site-competition epitaxy. Demonstration of wider range of reproducible doping control and doping concentration; Production of degenerately doped silicon carbide epilayers for ohmic contacts; Exhibition of record-breaking reverse voltages by an electronic device.
ACCESSION #
4233117

 

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