Seam line defects in silicon-on-insulator by merged epitaxial lateral overgrowth

Yang-Chin Shih; Jen-Chung Lou
September 1994
Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1638
Academic Journal
Fabricates silicon-on-insulator structures using epitaxial growth of silicon dioxide in chemical vapor deposition system. Achievement of a continuous epitaxial film over buried oxides; Observation of seam-like defect at the interfaces; Identification of a series of threading dislocations along the merging interface.


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