TITLE

Seam line defects in silicon-on-insulator by merged epitaxial lateral overgrowth

AUTHOR(S)
Yang-Chin Shih; Jen-Chung Lou
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1638
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Fabricates silicon-on-insulator structures using epitaxial growth of silicon dioxide in chemical vapor deposition system. Achievement of a continuous epitaxial film over buried oxides; Observation of seam-like defect at the interfaces; Identification of a series of threading dislocations along the merging interface.
ACCESSION #
4233110

 

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