TITLE

Double-etch geometry for millimeter-wave photonic band-gap crystals

AUTHOR(S)
Ozbay, E.; Michel, E.
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1617
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the fabrication of a double-etch technique for fabricating three-dimensional millimeter-wave photonic band-gap crystals. Details on the one-way tuning of the mid gap frequency; Fabrication of structures with different overetch ratios; Anisotropic etching properties of silicon in aqueous solutions.
ACCESSION #
4233103

 

Related Articles

  • Silicon Structures with Dielectric Insulation Obtained by Vertical Anisotropic Etching. Guk, E. G.; Tkachenko, A. G.; Tokranova, N. A.; Granitsyna, L. S.; Astrova, E. V.; Podlaskin, B. G.; Nashchekin, A. V.; Shul�pina, I. L.; Rutkovskii, S. V. // Technical Physics Letters;May2001, Vol. 27 Issue 5, p381 

    Silicon structures with vertical insulating walls were prepared for multielement devices with high element packing density requiring deep pockets in silicon single crystals. The technology is based on the anisotropic etching of (110)-oriented silicon crystals and filling the etch grooves with an...

  • Role of nitrogen related complexes in the formation of defects in silicon. Karoui, A.; Karoui, F. Sahtout; Kvit, A.; Rozgonyi, G. A.; Yang, D. // Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2114 

    Defect size and density distributions were obtained as a function of depth in nitrogen doped CZ silicon (N-CZ) following Hi-Lo-Hi and Lo-Hi annealing, using an oxygen precipitate profiler. The defects were also delineated by Wright etching and Nomarski optical microscopy on both cleaved and...

  • A study of direct optical transitions in silicon single crystals based on transmission spectra. Pankratov, I.; Seisyan, R.; Shorokhov, A. // Technical Physics Letters;Jul2012, Vol. 38 Issue 7, p597 

    The transmission spectrum of single-crystal silicon in the range of 2.75-3.25 eV has been obtained experimentally. An empirical formula is proposed to describe the spectral dependence of the optical density. The energy of the direct transition at the saddle point is found to be E(Γ) −...

  • On the nature of cracks using single-crystalline silicon subjected to anodic etching as an example. Gerasimenko, N.; Tynyshtykbaev, K.; Starkov, V.; Medetov, N.; Tokmoldin, S.; Gosteva, E. // Semiconductors;Aug2014, Vol. 48 Issue 8, p1088 

    Upon the prolonged anodic etching of single-crystalline silicon p-Si(100) in electrolytes with an internal current source, crack formation is observed. It is shown that the cracks are formed under the conditions of 'soft' action, when the formation of quasi-equilibrium point defects, their...

  • Resonance structure of the rate of Auger recombination in silicon nanocrystals. Kurova, N.; Burdov, V. // Semiconductors;Nov2010, Vol. 44 Issue 11, p1414 

    The rate of Auger recombination in silicon nanocrystals is calculated in the context of the approximation of the envelope function. It is shown that the dependence of the rate on the crystallite radius is an essentially unsteadily varying function with characteristic variations within three or...

  • On the phonon-assisted relaxation of excited bismuth donor states in uniaxially stressed silicon. Tsyplenkov, V.; Zhukavin, R.; Shastin, V. // Semiconductors;Aug2014, Vol. 48 Issue 8, p1017 

    The low-temperature phonon-assisted relaxation rates of the excited states of bismuth donors in a silicon crystal uniaxially stressed in the [100] crystallographic direction are calculated. The states belonging to the lower (2Δ) and upper (4Δ) valleys of the silicon conduction band are...

  • Photoabsorption and photoelectric process in Si nanocrystallites. Anchala; Purohit, S. P.; Mathur, K. C. // Applied Physics Letters;1/24/2011, Vol. 98 Issue 4, p043106 

    Using the effective mass approximation, we investigate the photoabsorption and photoelectric process in the conduction band of a single electron charged spherical Si semiconductor quantum dot nanostructure embedded in the amorphous SiO2 matrix. We consider the potential barrier at the interface...

  • Experimental determination of the N-p-partial density of states in the conduction band of GaN:... Katsikini, M.; Paloura, E.C.; Moustakas, T. D. // Journal of Applied Physics;2/1/1998, Vol. 83 Issue 3, p1437 

    Presents a study which investigated the N-p-partial density of states in the conduction band of GaN. What is GaN; Values of the direct band gap of GaN; Experimental conditions; Results of this study.

  • Crystallographic wet chemical etching of GaN. Stocker, D. A.; Schubert, E. F.; Redwing, J. M. // Applied Physics Letters;11/2/1998, Vol. 73 Issue 18 

    We demonstrate well-controlled crystallographic etching of wurtzite GaN grown on c-plane sapphire using H[sub 3]PO[sub 4], molten KOH, KOH dissolved in ethylene glycol, and NaOH dissolved in ethylene glycol between 90 and 180 °C, with etch rates as high as 3.2 μm/min. The crystallographic...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics