TITLE

GaN epitaxial layers grown on 6H-SiC by the sublimation sandwich technique

AUTHOR(S)
Wetzel, C.; Volm, D.
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/22/1994, Vol. 65 Issue 8, p1033
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the structural and optical properties of GaN epitaxial layers grown on 6H-SiC. Employment of the sublimation sandwich method to grow single crystal layers; Achievement of very narrow x-ray diffraction peaks of the GaN (0002) plane; Display of single sharp exciton line by the photoluminescence.
ACCESSION #
4233090

 

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