Chemical beam epitaxy growth of 1.3 mum InGaAsP/InP double heterostructure lasers using all gas

Rao, T. Sudersena; Lacelle, C.
August 1994
Applied Physics Letters;8/22/1994, Vol. 65 Issue 8, p1015
Academic Journal
Details the chemical beam epitaxy growth of low threshold 1.3 mum InGaAsP/InP double heterostructure lasers using all gas source doping. Minimum threshold current density for a cavity length laser; Exhibition of an internal quantum efficiency and internal loss by the lasers; Description of the temperature dependence of the threshold current.


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