High-power InGaAsP/GaAs 0.8-mum laser diodes and peculiarities of operational characteristics

Diaz, J.; Eliashevich, I.
August 1994
Applied Physics Letters;8/22/1994, Vol. 65 Issue 8, p1004
Academic Journal
Demonstrates the high-power operation of InGaAsP/GaAs laser diodes prepared by low-pressure metalorganic chemical vapor deposition. Measurement of threshold current density; Absence of degradation after 1000 h of operation in a quasi-continuous wave regime; Role of structure design in fabricating high-power lasers.


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