TITLE

Low-energy separation by implantation of oxygen structures via plasma source ion implantation

AUTHOR(S)
Zhang, L.; Shohet, J.L.
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/22/1994, Vol. 65 Issue 8, p962
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents study results on the feasibility of using plasma source ion implantation to produce separation. Implantation of oxygen ions into p-type (111) oriented silicon wafers; Effects of ion dose and high-voltage pulse width; Formation of a buried layer of silicon dioxide in the implanted wafers.
ACCESSION #
4233066

 

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