Low-energy separation by implantation of oxygen structures via plasma source ion implantation

Zhang, L.; Shohet, J.L.
August 1994
Applied Physics Letters;8/22/1994, Vol. 65 Issue 8, p962
Academic Journal
Presents study results on the feasibility of using plasma source ion implantation to produce separation. Implantation of oxygen ions into p-type (111) oriented silicon wafers; Effects of ion dose and high-voltage pulse width; Formation of a buried layer of silicon dioxide in the implanted wafers.


Related Articles

  • Study of Cu gettering to cavities in separation by implantation of oxygen substrates. Zhang, Miao; Lin, Chenglu; Hemment, P. L. F.; Gutjahr, K.; Go¨sele, U. // Applied Physics Letters;2/16/1998, Vol. 72 Issue 7 

    Gettering of Cu impurities to cavities induced in separation by implantation of oxygen (SIMOX) substrates has been investigated. The cavities were introduced beneath the buried oxide layer (BOX) of SIMOX by H[sup +] implantation and subsequently annealing. 5×10[sup 13]/cm[sup 2] or...

  • Si film separation obtained by high energy proton implantation. Braley, C.; Mazen, F.; Papon, A.-M.; Rieutord, F.; Charvet, A.-M.; Ntsoenzok, E. // AIP Conference Proceedings;Nov2012, Vol. 1496 Issue 1, p257 

    High energy protons implantation in the 1-1.5 MeV range can be used to detach free-standing thin silicon films with thickness between 15 and 30 μm. Recently, we showed that Si orientation has a strong effect on the layer separation threshold fluence and efficiency. While complete delamination...

  • Effect of the concentration of aluminum on the adsorption, texture, and structure characteristics of a mesoporous mineral mesophase of the SBA-15 type. Mel'gunova, E. A.; Shmakov, A. N.; Larichev, Yu. V.; Mel'gunov, M. S. // Kinetics & Catalysis;May2009, Vol. 50 Issue 3, p456 

    The effect of Al ion implantation on the properties of mesoporous aluminosilicate mineral phases of the SBA-15 type was studied. The implantation of Al was performed immediately under conditions of the synthesis of SBA-15 in a weakly acidic medium (pH ∼ 2.9). It was found that, under these...

  • Amorphous Ge quantum dots embedded in SiO2 formed by low energy ion implantation. Zhao, J. P.; Huang, D. X.; Chen, Z. Y.; Chu, W. K.; Makarenkov, B.; Jacobson, A. J.; Bahrim, B.; Rabalais, J. W. // Journal of Applied Physics;Jun2008, Vol. 103 Issue 12, p124304 

    Under ultrahigh vacuum conditions, extremely small Ge nanodots embedded in SiO2, i.e., Ge–SiO2 quantum dot composites, have been formed by ion implantation of 74Ge+ isotope into (0001) Z-cut quartz at a low kinetic energy of 9 keV using varying implantation temperatures. Transmission...

  • Solid phase crystallization of amorphous Fe–Si layers synthesized by ion implantation. Naito, Muneyuki; Ishimaru, Manabu; Hirotsu, Yoshihiko; Valdez, James A.; Sickafus, Kurt E. // Applied Physics Letters;6/19/2006, Vol. 88 Issue 25, p251904 

    Microstructural changes of ion-beam-synthesized amorphous Fe–Si layers on thermal annealing were investigated using transmission electron microscopy. Single crystal Si(111) substrates were irradiated with 120 keV Fe+ ions at cryogenic temperature to a fluence of 4.0×1017 cm-2,...

  • Radiation Hardness Improvement of Separation-by-Implantation-of-Oxygen/Silicon-on-Insulator Material by Nitrogen Ion Implantation. Enxia Zhang; Jiayin Sun; Jing Chen; Zhengxuan Zhang; Xi Wang; Ning Li; Guoqiang Zhang; Zhongli Liu // Journal of Electronic Materials;Nov2005, Vol. 34 Issue 11, pL53 

    In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers to improve the radiation hardness of the SIMOX material. The experiments of secondary ion mass spectroscopy (SIMS) analysis showed that some nitrogen ions were distributed in the buried oxide...

  • Enhancing the Ibis i2000â„¢ SIMOX Oxygen Ion Implanter. McKenna, C.; Dolan, R.; Blake, J.; Richards, S. // AIP Conference Proceedings;2006, Vol. 866 Issue 1, p622 

    The results of the Ibis i2000 uniformity enhancement program are presented. Two contributors to the uniformity of the top Silicon (SOI) and Buried Oxide (BOX) layers are identified; the implant dose uniformity and the temperature uniformity of the wafer during implant. A technique for achieving...

  • Ion implantation.  // Design Engineering;May96, p17 

    Focuses on ion implantation, a surface treatment which is said to extend tooling life, cut downtine and improve production quality. Features; Process description.

  • Plasma immersion ion implantation of the interior surface of a large cylindrical bore using an... Zeng, X.C.; Kwok, T.K.; Liu, A. G.; Chu, P. K.; Tang, B. Y. // Journal of Applied Physics;1/1/1998, Vol. 83 Issue 1, p44 

    Studies plasma immersion ion implantation (PIII) of the interior surface of a large cylindrical bore by using an auxiliary electrode. What is the source of the PIII; Discussion and results of the study; Investigation of a sheath expansion into a cylindrical bore with an auxiliary electrode.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics