Backscattered deposition in Ar sputter etch of silicon dioxide

Chang, C.Y.; McVittie, J.P.
October 1993
Applied Physics Letters;10/18/1993, Vol. 63 Issue 16, p2294
Academic Journal
Examines the mechanism of sputter etch of silicon dioxide in argon plasma. Observation of the sputter etch profile by scanning electron microscope; Basis on the interaction of three simultaneous processes; Extraction of geometry-independent parameters for the construction of Ar sputter etch model.


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