TITLE

# Backscattered deposition in Ar sputter etch of silicon dioxide

AUTHOR(S)
Chang, C.Y.; McVittie, J.P.
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/18/1993, Vol. 63 Issue 16, p2294
SOURCE TYPE
DOC. TYPE
Article
ABSTRACT
Examines the mechanism of sputter etch of silicon dioxide in argon plasma. Observation of the sputter etch profile by scanning electron microscope; Basis on the interaction of three simultaneous processes; Extraction of geometry-independent parameters for the construction of Ar sputter etch model.
ACCESSION #
4233054

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