Finite element analysis of stress relaxation in thin foil plan-view transmission electron

Hull, R.
October 1993
Applied Physics Letters;10/18/1993, Vol. 63 Issue 16, p2291
Academic Journal
Examines the use of finite element analysis to model stress relaxation in thin foil strained epitaxial layers. Comparison of stress relaxation with the unthinned structures; Use of plan-view transmission electron microscopy for epilayer stress relaxation; Modification of stress levels by thin foil relaxation effects.


Related Articles

  • Short-wavelength undulatory extinction in quartz recording coseismic deformation in the middle crust - an experimental study. Trepmann, C. A.; Stöckhert, B. // Solid Earth;2013, Vol. 4 Issue 2, p263 

    Deformation experiments are carried out on natural vein quartz in a modified Griggs-type solid medium apparatus to explore the preservation potential of microfabrics created by crystal-plastic deformation at high stress, overprinted during subsequent creep at lower stress. A corresponding stress...

  • In situ mechanical relaxation of Cu films growing on a Si substrate. Su, C.M.; Wuttig, Manfred // Applied Physics Letters;12/20/1993, Vol. 63 Issue 25, p3437 

    Examines the application of a novel technique to study the mechanical relaxation during thin film growth. Analysis of the stress as a function of time and thickness; Measurement of the resonance frequency of the vibrating membrane substrate; Characterization of stress relaxation time and...

  • A Simple Technique for Determining Yield Strength of Thin Films. M.H. Gordon // Experimental Mechanics;Sep2002, Vol. 42 Issue 3, p232 

    A technique to measure the yield strength of thin films has been developed which combines experimental observations of deflection and plastic deformation with finite element predictions of stress. This technique relies on integrated circuit technology to build bridge and cross beam test...

  • In situ transmission electron microscopy study of plastic deformation in passivated Al-Cu thin... Jawaranin, D.; Kawasaki, H. // Journal of Applied Physics;7/1/1997, Vol. 82 Issue 1, p171 

    Studies plastic deformation in passivated Al-1 wt %Cu thin films using a straining device in the transmission electron microscope. Microstructural studies of passivated and unpassivated thin films; Plastic deformation experiments involving in situ transmission electron microscope (TEM) straining.

  • An optical instrument for overall stress and local stress relaxation analysis in thin metal films. Kylner, Carina; Mattsson, Lars // Review of Scientific Instruments;Jan1997, Vol. 68 Issue 1, p143 

    Describes the design, development, and testing of an optical instrument for simultaneous overall stress and local stress relaxation measurements in thin metal films on substrates. Common reason for stress-induced topographic changes in a metal film; Principle; Optical system layout; Measurement...

  • Reduction of internal stress in sputter-deposited films by energetic ion bombardment. Nowak, R.; Horino, Y. // Applied Physics Letters;6/24/1996, Vol. 68 Issue 26, p3743 

    Examines the relaxation of high internal stresses in HfN thin films during deposition by a sputtering method through energetic ion bombardment. Estimation of the internal stresses from the measurements of the surface curvature; Analysis of the mechanical properties of HfN films; Use of...

  • Effective method for stress reduction in thick porous silicon films. Kim, Han-Su; Zouzounis, Eric C.; Xie, Ya-Hong // Applied Physics Letters;4/1/2002, Vol. 80 Issue 13, p2287 

    A promising stress control process is demonstrated to achieve near-zero stress levels in thick porous silicon (PS) films. Stress reduction is necessary for thick PS structures to be used for radio-frequency applications such as on-chip inductors and transmission lines that require very thick (>...

  • Grain collapses in strained aluminum thin films. Kristensen, Nils; Ericson, Fredric; Schweitz, Jan-Åke; Smith, Ulf // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2097 

    Presents information on a study which investigated a special stress relaxation effect in thin aluminum films evaporated onto oxidized silicon wafers. Substrate and film preparation; Annealing and thermomechanical testing; Grain structure of the different films; Results of thermomechanical in...

  • Interfacial Adhesion Study for Multi-Layer Structures with m-ELT Method and FEM Simulation. Hasunuma, Masahiko; Ito, Sachiyo; Kittaka, Hideyoshi // AIP Conference Proceedings;2004, Vol. 741 Issue 1, p45 

    The m-ELT method is widely used because of the simplicity. And the fracture mode of this method is similar to that of the actual TCT (Temperature Cycling Test) that is used for the reliability test of an LSI package. In this method, only the thermal stress that is stored in epoxy has been taken...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics