Very high mobility two-dimensional hole gas in Si/Ge[sub x]Si[sub 1-x]/Ge structures grown by

Xie, Y.H.; Monroe, Don
October 1993
Applied Physics Letters;10/18/1993, Vol. 63 Issue 16, p2263
Academic Journal
Examines the fabrication of modulation-doped silicon (Si)/Ge[sub x]Si[sub 1-x]/germanium (Ge) structures grown by molecular beam epitaxy. Employment of Ge layer as the conduction channel for two-dimensional hole gas (2DHG); Relationship between electron mobility and channel thickness; Effect of Ge/GeSi interface roughness on 2DHG mobility.


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