TITLE

Carrier lifetime versus anneal in low temperature growth GaAs

AUTHOR(S)
Harmon, E.S.; Melloch, M.R.
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/18/1993, Vol. 63 Issue 16, p2248
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Measures the photoexcited carrier lifetimes in low temperature growth gallium arsenide (LT-GaAs) films by femtosecond transient absorption. Growth of LT:GaAs by molecular beam epitaxy; Incorporation of 0.3 and 0.9 percent excess arsenic during film growth; Relationship between carrier lifetimes and precipitate spacing.
ACCESSION #
4233038

 

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