TITLE

Strain and charge distribution in GaN-AlN-GaN semiconductor-insulator-semiconductor structure

AUTHOR(S)
Bykhovski, Alexei; Gelmont, Boris
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/18/1993, Vol. 63 Issue 16, p2243
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the dependence of strain-induced electric field in the wurtzite structures on growth direction. Determination of polarization by the lattice-mismatch-induced stress in aluminum nitride (AlN); Consideration of polar angle as an additional parameter for the AlN-gallium nitride (GaN) device design; Account on the elastic strain energy of GaN layers.
ACCESSION #
4233036

 

Related Articles

  • Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy. Wu, Feng; Craven, Michael D.; Lim, Sung-Hwan; Speck, James S. // Journal of Applied Physics;7/15/2003, Vol. 94 Issue 2, p942 

    Achieving nitride-based device structures unaffected by polarization-induced electric fields can be realized with nonpolar GaN, although polarity plays a key role in the growth. (112&sline;0) a-plane GaN films were grown on (11&sline;02) r-plane sapphire substrates and subsequently laterally...

  • Simulation of N-face InGaN-based p-i-n solar cells. Chang, Jih-Yuan; Kuo, Yen-Kuang // Journal of Applied Physics;Aug2012, Vol. 112 Issue 3, p033109 

    GaN/InGaN p-i-n solar cells with N-face are simulated. In contrast to the detrimental effect of normal polarization, the internal electric field induced by reversed polarization enhances the efficiency of carrier collection by enlarging the energy band tilting to the favorable direction in the...

  • Influence of polarization induced electric fields on the wavelength and the refractive index of intersubband transitions in AlN/GaN coupled double quantum wells. Cen, L. B.; Shen, B.; Qin, Z. X.; Zhang, G. Y. // Journal of Applied Physics;May2009, Vol. 105 Issue 9, p093109 

    The influence of polarization induced electric fields on the wavelength and the refractive index of intersubband transitions (ISBTs) in AlN/GaN coupled double quantum wells (CDQWs) has been performed by solving Schrödinger and Poisson equations self-consistently. It is found that the...

  • Polarization of Two Close Metal Spheres in an External Homogeneous Electric Field. Mazets, I. E. // Technical Physics;Oct2000, Vol. 45 Issue 10, p1238 

    The dipole moment of each of two uncharged conducting spheres with radius R in an external electric field was calculated. The distance between the centers of the spheres is 2l. It was shown that, if R/l ... 0.8, the influence of higher multipole moments is negligible.

  • Polarizability model of emission from ceramic cathodes. Boscolo, I.; Cialdi, S. // Journal of Applied Physics;May2002, Vol. 91 Issue 9, p6125 

    We show that properly electroded ceramic disks are strong and robust electron emitters when excited with short voltage pulses. They can operate in two different regimes: (I) a regime at low exciting voltage, ∼0.7 kV per millimeter thickness and (II) a regime at high exciting voltage,...

  • Erratum: "Polarization around an ion in a dielectric continuum with truncated electrostatic interactions" [J. Chem. Phys. 110, 10679 (1999)]. Baker, Nathan A.; Hu¨nenberger, Philippe H.; McCammon, J. Andrew // Journal of Chemical Physics;8/8/2000, Vol. 113 Issue 6, p2510 

    An error was made in the derivation of Eq. (25) for the integrated electric field. The error is corrected and the modified results reported. In general, the various truncation schemes show improved agreement with the Born model for solvent polarization. © 2000 American Institute of Physics.

  • New equation for the internal field correction on the infrared spectra of condensed phases. Akiyama, Minoru // Journal of Chemical Physics;1/15/1986, Vol. 84 Issue 2, p631 

    The Lorentz internal field model has been widely used in order to correct the observed infrared spectra for the effect of the internal electric field. In all previous papers, the total polarization required in the Lorentz model has been considered to have only one component. In this paper,...

  • Spin polarization induced by an external electric field in a hybrid magnetic-electric barrier. Wang, Bin; Guo, Yong; Chen, Xin-Yi; Gu, Bing-Lin // Journal of Applied Physics;10/1/2002, Vol. 92 Issue 7, p4138 

    Recent studies indicated that under zero bias there is no spin polarization in an antiparallel magnetic-electric barrier structure, where double δ-function magnetic fields point in the opposite direction. Our research demonstrates that an external electric field can make such a hybrid...

  • In-plane electric field induced by polarization and lateral photovoltaic effect in a-plane GaN. Weiguo Hu; Bei Ma; Dabing Li; Miyake, Hideto; Hiramatsu, Kazumasa // Applied Physics Letters;6/8/2009, Vol. 94 Issue 23, p231102 

    A lateral photovoltaic effect was observed in a-plane GaN films grown on r-plane sapphire at room temperature. Under various light sources illuminations, contacts along the c-axis exhibited about ten times the photovoltage than those along the m-axis, which kept linear relationship with the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics