Strain and charge distribution in GaN-AlN-GaN semiconductor-insulator-semiconductor structure

Bykhovski, Alexei; Gelmont, Boris
October 1993
Applied Physics Letters;10/18/1993, Vol. 63 Issue 16, p2243
Academic Journal
Examines the dependence of strain-induced electric field in the wurtzite structures on growth direction. Determination of polarization by the lattice-mismatch-induced stress in aluminum nitride (AlN); Consideration of polar angle as an additional parameter for the AlN-gallium nitride (GaN) device design; Account on the elastic strain energy of GaN layers.


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