Forward delay in scaled Al[sub 0.48]In[sub 0.52]As/In[sub 0.53]Ga[sub 0.47]As heterojunction

Baquedano, J.A.; Levi, A.F.J.
October 1993
Applied Physics Letters;10/18/1993, Vol. 63 Issue 16, p2231
Academic Journal
Presents the measurements and numerical simulations of intrinsic forward delay in Al[sub 0.48]In[sub 0.52]As/In[sub 0.53]Ga[sub 0.47]As heterojunction bipolar transistors. Effect of electron transport on the base transit delay; Calculation for the step-injected current; Relationship between base thickness and base resistance.


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