Electronic properties of a one-dimensional channel field effect transistor formed by molecular

Burroughes, J.H.; Leadbeater, M.L.
October 1993
Applied Physics Letters;10/18/1993, Vol. 63 Issue 16, p2219
Academic Journal
Demonstrates channel field effect transistor using p-n layered backgate for electron gas control. Growth of electron gas by molecular beam epitaxy; Modulation of electron gas for narrow conduction channel formation; Association between transconductance and electron mobility.


Related Articles

  • Saturation in the transfer characteristics of (Al,Ga)As/GaAs modulation-doped field-effect transistors at 77 K. Masselink, W. T.; Drummond, T. J.; Klem, J.; Kopp, W.; Chang, Y. C.; Ponse, F.; Morkoç, H. // Applied Physics Letters;1984, Vol. 45 Issue 11, p1190 

    Modulation-doped field-effect transistors operating under large forward gate biases at 77 K have been studied both experimentally and theoretically. The theoretical analysis includes the self-consistent solution of Schrödinger's and Poisson's equations in the GaAs channel and includes...

  • Pseudomorphic ZnSe/n-GaAs doped-channel field-effect transistors by interrupted molecular beam epitaxy. Studtmann, G. D.; Gunshor, R. L.; Kolodziejski, L. A.; Melloch, M. R.; Cooper, J. A.; Pierret, R. F.; Munich, D. P.; Choi, C.; Otsuka, N. // Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1249 

    The fabrication and current-voltage characteristics of the first depletion-mode field-effect transistors based on a pseudomorphic ZnSe/n-GaAs heterointerface are described. The devices are doped-channel field-effect transistors produced by means of interrupted growth with the use of two separate...

  • High transconductance in-plane-gated transistors. Wieck, A.D.; Ploog, K. // Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1048 

    Demonstrates the fabrication of one-dimensional (1D) field-effect transistors at room temperature. Basis for the 1D transistors; Determination of the channel effective width; Use of molecular beam epitaxy grown heterostructures to prepare the channels; Factors attributed to higher current and...

  • Use of high-purity Al[sub x]Ga[sub 1-x]As layers in epitaxial structures for high-power microwave field-effect transistors. Zhuravlev, K. S.; Toropov, A. I.; Shamirzaev, T. S.; Bazarov, A. K.; Rakov, Yu. N.; Myakishev, Yu. B. // Technical Physics Letters;Aug99, Vol. 25 Issue 8, p595 

    The fabrication of high-purity layers of Al[sub x]Ga[sub 1-x]As solid solutions in the range 0 ≤x≤0.38 by molecular beam epitaxy is reported. The low-temperature photoluminescence spectra of these layers reveal predominantly the free exciton recombination line (X). The narrow width...

  • Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy. Radhakrishnan, K.; Dharmarasu, N.; Sun, Z.; Arulkumaran, S.; Ng, G. I. // Applied Physics Letters;12/6/2010, Vol. 97 Issue 23, p232107 

    AlGaN/GaN high-electron-mobility transistor structures grown on 100 mm high-resistivity Si(111) substrates using plasma-assisted molecular beam epitaxy are reported. The two-dimensional electron gas (2DEG) formation in the heterostructures was realized by the growth optimization of two-step low...

  • Self-aligned enhancement-mode and depletion-mode GaAs field-effect transistors employing the δ-doping technique. Schubert, E. F.; Cunningham, J. E.; Tsang, W. T. // Applied Physics Letters;12/22/1986, Vol. 49 Issue 25, p1729 

    This work describes a self-aligned Schottky-gate field-effect transistor (FET) which uses the δ-doping technique during crystal growth by molecular beam epitaxy. In this new FET the δ-doping concepts are employed in three ways: (i) for the highly doped surface to obtain nonalloyed ohmic...

  • Atomic layer doped field-effect transistor fabricated using Si molecular beam epitaxy. Nakagawa, Kiyokazu; van Gorkum, Aart A.; Shiraki, Yasuhiro // Applied Physics Letters;5/8/1989, Vol. 54 Issue 19, p1869 

    Atomic layer doped field-effect transistors (ALD FETs) have been fabricated, in which n-type, δ-doped, and p-type doped regions are used as a conductive channel and a punchthrough stopper, respectively. It is shown that the ALD FET shows a high transconductance while the punchthrough current...

  • Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field-effect transistors. Fan, Zhifang; Mohammad, S. N.; Aktas, O¨.; Botchkarev, A. E.; Salvador, A.; Morkoc¸, Hadis // Applied Physics Letters;8/26/1996, Vol. 69 Issue 9, p1229 

    Electrical characteristics of high performance of AlGaN/GaN modulation doped field-effect transistors (MODFETs) grown by reactive molecular beam epitaxy method are studied experimentally. The maximum measured drain-source current is 490 mA/mm, which saturates at a relatively low drain-source...

  • Fabrication of IrSi3/p-Si Schottky diodes by a molecular beam epitaxy technique. Lin, T. L.; Iannelli, J. M. // Applied Physics Letters;5/14/1990, Vol. 56 Issue 20, p2013 

    IrSi3/p-Si Schottky diodes have been fabricated by a molecular beam epitaxy technique at 630 °C. Good surface morphology was observed for IrSi3 layers grown at temperatures below 680 °C, and an increasing tendency to form islands is observed in samples grown at higher temperatures. Good...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics