TITLE

Electronic properties of a one-dimensional channel field effect transistor formed by molecular

AUTHOR(S)
Burroughes, J.H.; Leadbeater, M.L.
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/18/1993, Vol. 63 Issue 16, p2219
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates channel field effect transistor using p-n layered backgate for electron gas control. Growth of electron gas by molecular beam epitaxy; Modulation of electron gas for narrow conduction channel formation; Association between transconductance and electron mobility.
ACCESSION #
4233029

 

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