TITLE

Structure of niobium films on sapphire

AUTHOR(S)
McMorrow, D.F.; Cowley, R.A.
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/18/1993, Vol. 63 Issue 16, p2195
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the structure of niobium (Nb) thin films grown by molecular beam epitaxy on sapphire. Assessment of the thickness in Nb films; Quality of crystallography in Nb; Evidence of distortion in Nb atomic planes.
ACCESSION #
4233021

 

Related Articles

  • Growth of thin-film niobium and niobium oxide layers by molecular-beam epitaxy. Petrucci, M.; Pitt, C. W.; Reynolds, S. R.; Milledge, H. J.; Mendelssohn, M. J.; Dineen, C.; Freeman, W. G. // Journal of Applied Physics;2/1/1988, Vol. 63 Issue 3, p900 

    Focuses on a study that described the growth of thin-film niobium and niobium oxide layers by molecular-beam epitaxy. Growth conditions; Discussion of niobium metal layers; Post-oxidation studies.

  • Structural properties of GaN films grown on sapphire by molecular beam epitaxy. Zhu, Q.; Botchkarev, A. // Applied Physics Letters;2/19/1996, Vol. 68 Issue 8, p1141 

    Investigates molecular beam epitaxy developed GaN films in sapphire substrates. Employment of x-ray diffraction technique and electron microscopy in the experiment; Relationship between in-plane structural order and electrical properties; Details on the mosaic spread technique providing poor...

  • Twin symmetry texture of energetically condensed niobium thin films on sapphire substrate (a-plane Al2O3). Zhao, X.; Phillips, L.; Reece, C. E.; Seo, Kang; Krishnan, M.; Valderrama, E. // Journal of Applied Physics;Aug2011, Vol. 110 Issue 3, p033523 

    An energetic condensation technique, cathodic arc discharge deposition, is used to grow epitaxial Niobium (Nb) thin films on a-plane sapphire (hexagonal-closed-packed Al2O3) at moderate substrate heating temperature (<400 °C). The epitaxial Nb(110)/Al2O3(1,1,-2,0) thin films reached a maximum...

  • Hot hole relaxation dynamics in p-GaN. Ye, Hong; Hong Ye; Wicks, G. W.; Wicks, G.W.; Fauchet, P. M.; Fauchet, P.M. // Applied Physics Letters;8/21/2000, Vol. 77 Issue 8 

    The hot hole relaxation dynamics is studied in a Mg-doped p-type GaN film grown by molecular-beam epitaxy on sapphire. A nondegenerate femtosecond pump-probe technique is used, in which the holes are excited by an infrared pump and the hole dynamics is monitored by a tunable near ultraviolet...

  • Growth condition dependence of morphology and electric properties of ZnO films on sapphire substrates prepared by molecular beam epitaxy. Ohgaki, Takeshi; Ohashi, Naoki; Kakemoto, Hirofumi; Wada, Satoshi; Adachi, Yutaka; Haneda, Hajime; Tsurumi, Takaaki // Journal of Applied Physics;2/15/2003, Vol. 93 Issue 4, p1961 

    Zinc oxide (ZnO) films were grown on sapphire (11&2macr;0) substrates by molecular beam epitaxy under oxygen radical irradiation. The effect of the growth conditions, including the Zn/O ratio supplied to the film surface, on the electrical properties of ZnO films was studied in relation to the...

  • Radical-source molecular beam epitaxy of ZnMgO and ZnCdO alloys on ZnO substrates. Sadofev, S.; Schäfer, P.; Fan, Y.-H.; Blumstengel, S.; Henneberger, F.; Schulz, D.; Klimm, D. // Applied Physics Letters;11/12/2007, Vol. 91 Issue 20, p201923 

    We report on a dramatic improvement of the crystalline quality of ZnMgO and ZnCdO epilayers using Bridgman-grown ZnO substrates. ZnMgO alloys grow pseudomorphically over several 100 nm and the (0002) ω-rocking curve width is as low as 19 arc sec. Strain inhomogeneities in low-temperature...

  • Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization. Chen, Yefan; Bagnall, D.M. // Journal of Applied Physics;10/1/1998, Vol. 84 Issue 7, p3912 

    Reports on a study which focused on the growth of ZnO single crystal thin films, on c-plane sapphire. Details on the usage of oxygen microwave plasma and molecular beam epitaxy; Deposition of thin film ZnO; Methodology used to conduct the study; Results of the study.

  • Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates. Shen, X. Q.; Matsuhata, H.; Okumura, H. // Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p021912 

    Structural properties of GaN films grown on vicinal sapphire (0001) substrates with various vicinal angles by plasma-assisted molecular beam epitaxy are investigated. High-resolution x-ray diffraction (HRXRD) results reveal the dramatic improvement of both tilting and twisting grain features of...

  • Chemical and structural transformation of sapphire (AI...O...) surface by plasma source nitridation. Cho, Y.; Kim, Y. // Journal of Applied Physics;6/1/1999, Vol. 85 Issue 11, p7909 

    Studies the chemical and structural changes of the sapphire substrate upon nitridation process by constricted-plasma source molecular beam epitaxy (MBE). Experimental setup of the study; Chemical analysis by x-ray photoelectron spectroscopy (XPE); Morphological change of the sapphire substrate;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics