YBa[sub 2]Cu[sub 3]O[sub 7-delta] films on Si with Y-stabilized ZrO[sub 2] and Y[sub 2]O[sub 3]

Bardal, A.; Zwerger, M.
September 1992
Applied Physics Letters;9/7/1992, Vol. 61 Issue 10, p1243
Academic Journal
Examines the interfaces of YBa[sub 2]Cu[sub 3]O[sub 7-delta] thin films on Si substrates with Y-stabilized ZrO[sub 2] and Y[sub 2]O[sub 3] buffer layers by high-resolution electron microscopy. Discovery of amorphous silica layer at the Si-YSZ interfaces; Presence of planar faults in the Si substrate; Occurrence of misfit dislocations.


Related Articles

  • Optical and Structural Studies of Sol-Gel Deposited Nanostructured CdO Thin Films: Annealing Effect. Ziabari, A. Abdolahzadeh; Ghodsi, F. E. // Acta Physica Polonica, A.;Sep2011, Vol. 120 Issue 3, p536 

    Nanocrystalline CdO thin films were prepared by sol-gel dip-coating method using a different solution. The as-deposited films were subjected to drying temperature of 120° in air. The prepared films were annealed in different temperatures of 200, 300 and 400 °C. The characterization of...

  • Crystallization of amorphous silicon thin films: comparison between experimental and computer simulation results. Kioseoglou, J.; Komninou, Ph.; Dimitrakopulos, G.; Antoniades, I.; Hatalis, M.; Karakostas, Th. // Journal of Materials Science;Jun2008, Vol. 43 Issue 11, p3976 

    Polycrystalline silicon obtained by the crystallization of thin amorphous silicon films has been an important material for microelectronics technology during the last decades. Many properties are improved in crystallized amorphous silicon compared to the as-deposited polysilicon such as larger...

  • Preparation of Pb(Zr,Ti)O3 thin films by sol gel processing: Electrical, optical, and electro-optic properties. Yi, Guanghua; Wu, Zheng; Sayer, Michael // Journal of Applied Physics;9/1/1988, Vol. 64 Issue 5, p2717 

    Deals with the preparation of Pb(Zr,Ti)O3 (PZT) thin films by sol gel processing. Investigation on the crystalline phases of thin films; Properties of PZT thin films; Discussion on electro-optic effects in PZT thin films prepared by chemical methods.

  • Adhesion of ultrathin ZrO[sub 2](111) films on Ni(111) from first principles. Christensen, A.; Carter, Emily A. // Journal of Chemical Physics;4/1/2001, Vol. 114 Issue 13 

    We have studied the ZrO[sub 2](111)/Ni(111) interface using the ultrasoft pseudopotential formalism within density functional theory. We find that ZrO[sub 2](111) adheres relatively strongly at the monolayer level but thicker ceramic films interact weakly with the Ni-substrate. We argue that the...

  • (001) faceting and Bi[sub 2]Sr[sub 2]CuO[sub 6+x](T[sub c]=7-22K) phase formation at the.... Feng, Y.; Larbalestier, D.C. // Applied Physics Letters;9/7/1992, Vol. 61 Issue 10, p1234 

    Investigates the Ag/Bi-Sr-Ca-Cu-O (BSCCO) interface in Ag-clad bi-2212 tapes by high-resolution transmission electron microscopy. Absence of nonsuperconducting second phases from the interface; Observation of a one-half-unit-cell-thick layer of the Bi-2201 phase; Presence of texturing of the...

  • Microstructure and magnetic properties of the FeTaCN nanocrystalline thin films. Chou, C. Y.; Kuo, P. C.; Yao, Y. D.; Chen, S. C.; Sun, A. C.; Lie, C. T. // Journal of Applied Physics;5/15/2003, Vol. 93 Issue 10, p7205 

    FeTaCN films were deposited on quartz substrates by cosputtering of Fe and TaC targets at room temperature with different N[SUB2] flow rate ratios in the sputtering gas. The as-deposited films were postannealed in vacuum for 30 min at various temperatures. The effects of annealing temperature on...

  • High-resolution transmission electron microscopic study of the gamma-FeSi[sub 2]/Si(111) interface. Muller, E.; Grindatto, D.P. // Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p1938 

    Determines the atomic structure of the B-type gamma-FeSi[sub 2]//Si(111) interfaces by high-resolution transmission electron microscopy. Combination of dynamical calculations of the image contrast in the study; Agreement of one interface model with observations; Attachment of Fe atoms to the...

  • Preservation of atomic flatness at SiO[sub 2]/Si(111) interfaces during thermal oxidation in a furnace. Miyata, Noriyuki; Watanabe, Heiji; Ichikawa, Masakazu // Applied Physics Letters;4/6/1998, Vol. 72 Issue 14 

    SiO[sub 2]/Si(111) interfaces formed by a furnace oxidation are studied by a scanning reflection electron microscopy (SREM). SREM observation indicates that the initial atomic steps on a Si(111) surface are preserved at the SiO[sub 2]/Si interface and the interfacial steps do not move laterally...

  • Dislocation reduction in GaN thin films via lateral overgrowth from trenches. Chen, Y.; Schneider, R. // Applied Physics Letters;10/4/1999, Vol. 75 Issue 14, p2062 

    Discusses the dislocation reduction in thin films via lateral overgrowth from trenches (LOFT). Structures of thin films before and after regrowth; Advantages of LOFT over epitaxial lateral overgrowth (ELO); Cross-sectional scanning electron microscope (SEM) images of thin films.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics