Ge segregation and its suppression in GaAs epilayers grown on Ge(111) substrate

Kawai, T.; Yonezu, H.
September 1992
Applied Physics Letters;9/7/1992, Vol. 61 Issue 10, p1216
Academic Journal
Investigates the interdiffusion of the compositional atoms at heterointerface between a GaAs epilayer and a Ge(111) substrate by secondary ion mass spectroscopy. Suppression of the diffusion of Ge into the GaAs epilayer; Realization of an abrupt heterointerface; Observation of the compositional diffusion of Al atoms into the GaAs epilayer.


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