Characteristics of plasma deposited tungsten Schottky contacts to GaAs

Yong Tae Kim; Chang Woo Lee
September 1992
Applied Physics Letters;9/7/1992, Vol. 61 Issue 10, p1205
Academic Journal
Develops a low resistive tungsten Schottky contact to GaAs by plasma enhanced chemical vapor deposition. Measurement of the resistivity of tungsten films; Coexistence of the film structure of oriented alpha-phase and oriented beta-phase tungsten; Indication of the I-V characteristics of GaAs Schottky contacts formed at 300 degrees Celsius.


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