TITLE

Characteristics of plasma deposited tungsten Schottky contacts to GaAs

AUTHOR(S)
Yong Tae Kim; Chang Woo Lee
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/7/1992, Vol. 61 Issue 10, p1205
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Develops a low resistive tungsten Schottky contact to GaAs by plasma enhanced chemical vapor deposition. Measurement of the resistivity of tungsten films; Coexistence of the film structure of oriented alpha-phase and oriented beta-phase tungsten; Indication of the I-V characteristics of GaAs Schottky contacts formed at 300 degrees Celsius.
ACCESSION #
4232995

 

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